Diodes Incorporated ZXMD65P02N8TA
- Part Number:
- ZXMD65P02N8TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848388-ZXMD65P02N8TA
- Description:
- MOSFET 2P-CH 20V 4A 8-SOIC
- ECAD Model:
-
- Datasheet:
- ZXMD65P02N8
Diodes Incorporated ZXMD65P02N8TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMD65P02N8TA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureLOW THRESHOLD
- Voltage - Rated DC-20V
- Max Power Dissipation1.75W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-4.4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXMD65P02
- Pin Count8
- Number of Elements2
- Number of Channels2
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6.6 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA (Min)
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
- Rise Time29.9ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)29.9 ns
- Turn-Off Delay Time57.9 ns
- Continuous Drain Current (ID)5.1A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)4A
- Drain-source On Resistance-Max0.05Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
ZXMD65P02N8TA Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMD65P02N8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMD65P02N8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMD65P02N8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMD65P02N8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
ZXMD65P02N8TA More Descriptions
Trans MOSFET P-CH 20V 5.1A 8-Pin SOIC T/R
MOSFET 2P-CH 20V 4A 8-SOIC
MOSFETs Dl 20V P-Chnl HDMOS
OEMs, CMs ONLY (NO BROKERS)
MOSFET 2P-CH 20V 4A 8-SOIC
MOSFETs Dl 20V P-Chnl HDMOS
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to ZXMD65P02N8TA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsNumber of ChannelsOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxFET TechnologyFET FeatureRadiation HardeningRoHS StatusLead FreeOperating TemperaturePower - MaxPublishedQualification StatusDrain to Source Breakdown VoltageHeightLengthWidthSurface MountTransistor Element MaterialPbfree CodeTerminal PositionJESD-30 CodeConfigurationPolarity/Channel TypeDS Breakdown Voltage-MinView Compare
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ZXMD65P02N8TASurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgTape & Reel (TR)e3Obsolete1 (Unlimited)8EAR99MATTE TIN150°C-55°CLOW THRESHOLD-20V1.75WGULL WING260-4.4A40ZXMD65P02822ENHANCEMENT MODE2W6.6 ns2 P-Channel (Dual)SWITCHING50m Ω @ 2.9A, 4.5V700mV @ 250μA (Min)960pF @ 15V4A20nC @ 4.5V29.9ns20V29.9 ns57.9 ns5.1A12V4A0.05OhmMETAL-OXIDE SEMICONDUCTORStandardNoRoHS CompliantContains Lead----------------- -
-Surface Mount8-TSSOP, 8-MSOP (0.118, 3.00mm Width)--Tape & Reel (TR)e3Obsolete1 (Unlimited)--Matte Tin (Sn)------260-30-8-----N and P-Channel-130m Ω @ 1.7A, 4.5V700mV @ 250μA (Min)350pF @ 15V-6nC @ 4.5V-20V-------Logic Level Gate-ROHS3 Compliant--55°C~150°C TJ1.04W--------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgTape & Reel (TR)e3Obsolete1 (Unlimited)8EAR99MATTE TIN150°C-55°CLOW THRESHOLD-20V1.25WGULL WING260-4.4A40ZXMD65P02822ENHANCEMENT MODE1.25W6.6 ns2 P-Channel (Dual)SWITCHING50m Ω @ 2.9A, 4.5V700mV @ 250μA (Min)960pF @ 15V-20nC @ 4.5V29.9ns20V29.9 ns57.9 ns4A12V4A0.05OhmMETAL-OXIDE SEMICONDUCTORStandard-RoHS CompliantLead Free-1.75W2001Not Qualified-20V1.5mm5mm4mm--------
-
-Surface Mount8-TSSOP, 8-MSOP (0.118, 3.00mm Width)--Tape & Reel (TR)e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)--LOW THRESHOLD--GULL WING260-40-82-ENHANCEMENT MODE--N and P-ChannelSWITCHING135m Ω @ 1.7A, 10V1V @ 250μA (Min)290pF @ 25V-8nC @ 10V-30V----2.3A0.135OhmMETAL-OXIDE SEMICONDUCTORLogic Level Gate-ROHS3 Compliant--55°C~150°C TJ1.04W-Not Qualified----YESSILICONyesDUALS-PDSO-G8SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEN-CHANNEL AND P-CHANNEL30V
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