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ZTX949

Diodes Incorporated ZTX949

Part Number:
ZTX949
Manufacturer:
Diodes Incorporated
Ventron No:
3068799-ZTX949
Description:
TRANS PNP 30V 4.5A E-LINE
ECAD Model:
Datasheet:
ZTX949

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Specifications
Diodes Incorporated ZTX949 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX949.
  • Factory Lead Time
    15 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Max Power Dissipation
    1.2W
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -4.5A
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZTX949
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.2W
  • Power - Max
    1.58W
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    4.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1A 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    320mV @ 300mA, 5A
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    100MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    -6V
  • Continuous Collector Current
    -4.5A
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZTX949 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 5A.Maintaining the continuous collector voltage at -4.5A is essential for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4.5A).100MHz is present in the transition frequency.Maximum collector currents can be below 4.5A volts.

ZTX949 Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 320mV @ 300mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 100MHz


ZTX949 Applications
There are a lot of Diodes Incorporated
ZTX949 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZTX949 More Descriptions
ZTX949 Series 30 V 4.5 A PNP Silicon Planar Medium Power Transistor - TO-92-3
Trans, Pnp, 30V, 4.5A, 200Deg C, 1.58W Rohs Compliant: Yes |Diodes Inc. ZTX949
Trans GP BJT PNP 30V 4.5A 1200mW 3-Pin E-Line
Transistor, PNP, 30V, 4.5A, 200DEG C, 1.58W;
Product Comparison
The three parts on the right have similar specifications to ZTX949.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    HTS Code
    Terminal Position
    JESD-30 Code
    Qualification Status
    Configuration
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Reach Compliance Code
    View Compare
  • ZTX949
    ZTX949
    Diodes Incorporated
    15 Weeks
    Through Hole
    Through Hole
    E-Line-3
    3
    453.59237mg
    SILICON
    -55°C~200°C TJ
    Bulk
    2006
    e3
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    -30V
    1.2W
    WIRE
    260
    -4.5A
    100MHz
    40
    ZTX949
    3
    1
    Single
    1.2W
    1.58W
    100MHz
    PNP
    PNP
    30V
    4.5A
    100 @ 1A 1V
    50nA ICBO
    320mV @ 300mA, 5A
    30V
    100MHz
    50V
    -6V
    -4.5A
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZTX951STOB
    ZTX951STOB
    Diodes Incorporated
    -
    -
    Through Hole
    E-Line-3, Formed Leads
    -
    -
    SILICON
    -55°C~200°C TJ
    Tape & Reel (TR)
    2006
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    -
    -
    -
    WIRE
    260
    -
    -
    40
    ZTX951
    3
    1
    -
    -
    1.2W
    -
    PNP
    PNP
    -
    -
    100 @ 1A 1V
    50nA ICBO
    300mV @ 400mA, 4A
    -
    120MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    8541.29.00.75
    SINGLE
    R-PSIP-W3
    Not Qualified
    SINGLE
    SWITCHING
    60V
    4A
    120MHz
    -
    ZTX949 vs ZTX951STOB
  • ZTX958STOB
    ZTX958STOB
    Diodes Incorporated
    -
    -
    Through Hole
    E-Line-3, Formed Leads
    -
    -
    SILICON
    -55°C~200°C TJ
    Tape & Reel (TR)
    2006
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    -
    -
    -
    WIRE
    260
    -
    -
    40
    ZTX958
    3
    1
    -
    -
    1.2W
    -
    PNP
    PNP
    -
    -
    100 @ 500mA 10V
    50nA ICBO
    400mV @ 100mA, 500mA
    -
    85MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    8541.29.00.75
    SINGLE
    R-PSIP-W3
    Not Qualified
    SINGLE
    SWITCHING
    400V
    500mA
    85MHz
    unknown
    ZTX949 vs ZTX958STOB
  • ZTX957STOB
    ZTX957STOB
    Diodes Incorporated
    -
    -
    Through Hole
    E-Line-3, Formed Leads
    -
    -
    SILICON
    -55°C~200°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    -
    -
    -
    WIRE
    260
    -
    -
    40
    ZTX957
    3
    1
    -
    -
    1.2W
    -
    PNP
    PNP
    -
    -
    100 @ 500mA 10V
    50nA ICBO
    200mV @ 300mA, 1A
    -
    85MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    8541.29.00.75
    SINGLE
    R-PSIP-W3
    Not Qualified
    SINGLE
    SWITCHING
    300V
    1A
    85MHz
    -
    ZTX949 vs ZTX957STOB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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