Diodes Incorporated ZTX849
- Part Number:
- ZTX849
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585073-ZTX849
- Description:
- TRANS NPN 30V 5A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX849
Diodes Incorporated ZTX849 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX849.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierE-Line
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation1.2W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX849
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic220mV @ 200mA, 5A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage180mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current5A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX849 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 100MHz.A maximum collector current of 5A volts can be achieved.
ZTX849 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849 Applications
There are a lot of Diodes Incorporated
ZTX849 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 100MHz.A maximum collector current of 5A volts can be achieved.
ZTX849 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849 Applications
There are a lot of Diodes Incorporated
ZTX849 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX849 More Descriptions
Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
ZTX849 Series NPN 5 A 30 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR NPN 30V 5000MA TO92-3
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:5A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:220mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Termination Type:Through Hole; Voltage Vcbo:80V
ZTX849 Series NPN 5 A 30 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR NPN 30V 5000MA TO92-3
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:5A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:220mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Termination Type:Through Hole; Voltage Vcbo:80V
The three parts on the right have similar specifications to ZTX849.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeJESD-30 CodeQualification StatusSurface MountReach Compliance CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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ZTX84915 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICONE-Line-55°C~200°C TJBulk2006e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors30V1.2WBOTTOMWIRE2605A100MHz40ZTX84931Single1.2WSWITCHING100MHzNPNNPN30V5A100 @ 1A 1V50nA ICBO220mV @ 200mA, 5A30V100MHz180mV80V6V5A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free----------- -
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mgSILICON--55°C~200°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-60V1.2W-WIRE2605A-40ZTX85131Single-SWITCHING130MHzNPNNPN250mV5A100 @ 2A 1V50nA ICBO250mV @ 200mA, 5A60V130MHz180mV150V6V5A4.01mm4.77mm2.41mm--RoHS CompliantLead Free8541.29.00.75R-PSIP-W3Not Qualified-------
-
--Through HoleE-Line-3--SILICON--55°C~200°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN---SINGLEWIRE260--40ZTX86931--SWITCHING-NPNNPN--300 @ 1A 1V50nA ICBO220mV @ 100mA, 5A-100MHz-----------8541.29.00.75R-PSIP-W3Not QualifiedNOcompliantSINGLE1.2W25V5A100MHz
-
-Through HoleThrough HoleE-Line-3-453.59237mg---55°C~200°C TJTape & Reel (TR)2012--Obsolete1 (Unlimited)----25V1.2W---5A--ZTX8693-Single--100MHz-NPN220mV5A300 @ 1A 1V50nA ICBO220mV @ 100mA, 5A25V--60V6V5A4.01mm4.77mm2.41mm--RoHS CompliantLead Free----------
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