Diodes Incorporated ZTX658STOB

Name: ZTX658STOB
Brand: Diodes Incorporated
SKU: 2468702-ZTX658STOB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ZTX658STOB

Manufacturer:: Diodes Incorporated

Ventron No:: 2468702-ZTX658STOB

Description:: TRANS NPN 400V 0.5A E-LINE

ECAD Model:

Datasheet:: ZTX658STOB

Specifications

Diodes Incorporated ZTX658STOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX658STOB.

Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
ZTX658
Pin Count
3
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
50MHz
RoHS Status
RoHS Compliant

Description

ZTX658STOB Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.There is a 400V maximal voltage in the device due to collector-emitter breakdown.

ZTX658STOB Features
the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA

ZTX658STOB Applications
There are a lot of Diodes Incorporated
ZTX658STOB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to ZTX658STOB.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Pin Count

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

RoHS Status

Factory Lead Time

Mount

Number of Pins

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Reference Standard

Number of Elements

Polarity

Element Configuration

Transistor Application

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

Radiation Hardening

Lead Free

HTS Code

JESD-30 Code

Qualification Status

Reach Compliance Code

Power Dissipation

View Compare
ZTX658STOB

Diodes Incorporated

Through Hole

E-Line-3, Formed Leads

-55°C~200°C TJ

Tape & Reel (TR)

2012

Obsolete

1 (Unlimited)

ZTX658

3

1W

NPN

50 @ 100mA 5V

100nA ICBO

500mV @ 10mA, 100mA

400V

500mA

50MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
ZTX601BSTZ

Diodes Incorporated

Through Hole

E-Line-3, Formed Leads

-55°C~200°C TJ

Tape & Box (TB)

2006

Active

1 (Unlimited)

ZTX601

3

-

NPN - Darlington

10000 @ 500mA 10V

10μA

1.2V @ 10mA, 1A

-

-

250MHz

ROHS3 Compliant

15 Weeks

Through Hole

3

453.59237mg

SILICON

e3

yes

3

EAR99

Matte Tin (Sn)

160V

1W

WIRE

260

1A

40

CECC

1

NPN

Single

SWITCHING

160V

1A

160V

150MHz

1.1V

180V

10V

1A

4.01mm

4.77mm

2.41mm

No

Lead Free

-

-

-

-

-

ZTX658STOB vs ZTX601BSTZ
ZTX601A

Diodes Incorporated

Through Hole

E-Line-3

-55°C~200°C TJ

Bulk

-

Obsolete

1 (Unlimited)

ZTX601

3

-

NPN - Darlington

2000 @ 500mA 10V

10μA

1.2V @ 10mA, 1A

-

-

250MHz

ROHS3 Compliant

-

Through Hole

-

453.59237mg

SILICON

e3

-

3

EAR99

Matte Tin (Sn)

160V

1W

WIRE

NOT SPECIFIED

1A

NOT SPECIFIED

-

1

NPN

Single

-

1.2V

1A

160V

250MHz

-

180V

10V

1A

4.01mm

4.77mm

2.41mm

-

Lead Free

8541.29.00.75

R-PSIP-W3

Not Qualified

-

-

ZTX658STOB vs ZTX601A
ZTX605STOA

Diodes Incorporated

Through Hole

E-Line-3, Formed Leads

-55°C~200°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

ZTX605

3

-

NPN - Darlington

2000 @ 1A 5V

10μA

1.5V @ 1mA, 1A

-

-

150MHz

RoHS Compliant

-

Through Hole

-

-

SILICON

e3

-

3

EAR99

MATTE TIN

120V

1W

WIRE

260

1A

40

CECC

1

NPN

Single

SWITCHING

1.5V

1A

120V

150MHz

-

140V

10V

1A

-

-

-

-

Lead Free

8541.29.00.75

R-PSIP-W3

Not Qualified

unknown

1W

ZTX658STOB vs ZTX605STOA