Diodes Incorporated ZTX653STOB
- Part Number:
- ZTX653STOB
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468681-ZTX653STOB
- Description:
- TRANS NPN 100V 2A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX653STOB
Diodes Incorporated ZTX653STOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX653STOB.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC100V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency175MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX653
- Pin Count3
- Reference StandardCECC
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency140MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)25
- Continuous Collector Current2A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZTX653STOB Description
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO 2 Amp continuous current Low saturation voltage Ptot=1 Watt
ZTX653STOB Applications
Automotive Advanced driver assistance systems (ADAS) Industrial Building automation Enterprise systems Enterprise machine
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO 2 Amp continuous current Low saturation voltage Ptot=1 Watt
ZTX653STOB Applications
Automotive Advanced driver assistance systems (ADAS) Industrial Building automation Enterprise systems Enterprise machine
ZTX653STOB More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Through Hole 2.41 mm 4.01 mm 4.77 mm 453.59237 mg NPN 175 MHz
Small Signal Bipolar Transistors
French Electronic Distributor since 1988
Compliant Through Hole 2.41 mm 4.01 mm 4.77 mm 453.59237 mg NPN 175 MHz
Small Signal Bipolar Transistors
French Electronic Distributor since 1988
The three parts on the right have similar specifications to ZTX653STOB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeHTS CodeReach Compliance CodeJESD-30 CodePolarityDC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionCollector Emitter Saturation VoltageREACH SVHCView Compare
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ZTX653STOBThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN100V1WWIRE2602A175MHz40ZTX6533CECCNot Qualified1Single1WSWITCHING175MHzNPNNPN100V2A100nA ICBO500mV @ 200mA, 2A100V140MHz120V5V252A4.01mm4.77mm2.41mmRoHS CompliantLead Free--------- -
Through HoleThrough HoleE-Line-3, Formed Leads--SILICON-55°C~200°C TJTape & Reel (TR)-e3Obsolete1 (Unlimited)3EAR99MATTE TIN120V1WWIRE2601A-40ZTX6053CECCNot Qualified1Single1WSWITCHING--NPN - Darlington1.5V1A10μA1.5V @ 1mA, 1A120V150MHz140V10V-1A---RoHS CompliantLead Free8541.29.00.75unknownR-PSIP-W3NPN2000 @ 1A 5V150MHz--
-
Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---12V1W--3A--ZTX688B3---Single--150MHz-NPN350mV3A100nA ICBO350mV @ 20mA, 3A12V-12V5V-3A4.01mm4.77mm2.41mmRoHS CompliantLead Free----500 @ 100mA 2V-350mVNo SVHC
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Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---180V1W--500mA--ZTX696B3---Single--70MHz-NPN250mV500mA100nA ICBO250mV @ 5mA, 200mA180V-180V5V-500mA4.01mm4.77mm2.41mmRoHS CompliantLead Free-unknown--150 @ 200mA 5V-250mVNo SVHC
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