Diodes Incorporated ZTX653STOA
- Part Number:
- ZTX653STOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468700-ZTX653STOA
- Description:
- TRANS NPN 100V 2A E-LINE
- Datasheet:
- ZTX653STOA
Diodes Incorporated ZTX653STOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX653STOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTape & Reel (TR)
- Published2016
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.75
- Voltage - Rated DC100V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX653
- Pin Count3
- Reference StandardCECC
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency140MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)25
- Continuous Collector Current2A
- Height4.95mm
- Length4.95mm
- Width3.94mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZTX653STOA Overview
Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX653STOA Features
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX653STOA Applications
There are a lot of Diodes Incorporated
ZTX653STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX653STOA Features
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX653STOA Applications
There are a lot of Diodes Incorporated
ZTX653STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX653STOA More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN 100V 2A E-LINE
Small Signal Bipolar Transistors
TRANS NPN 100V 2A E-LINE
Small Signal Bipolar Transistors
The three parts on the right have similar specifications to ZTX653STOA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeFactory Lead TimeNumber of PinsPbfree CodeFrequencyPower DissipationDC Current Gain (hFE) (Min) @ Ic, VceCollector Emitter Saturation VoltageREACH SVHCRadiation HardeningSubcategoryPolarityFrequency - TransitionView Compare
-
ZTX653STOAThrough HoleThrough HoleE-Line-3, Formed Leads453.59237mgSILICON-55°C~200°C TJTape & Reel (TR)2016e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.75100V1WWIRE2602A40ZTX6533CECCR-PSIP-W3Not Qualified1SingleSWITCHING175MHzNPNNPN500mV2A100nA ICBO500mV @ 200mA, 2A100V140MHz120V5V252A4.95mm4.95mm3.94mmRoHS CompliantLead Free-------------
-
Through HoleThrough HoleE-Line-3, Formed Leads453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2012e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-25V1WWIRE2602A40ZTX6493---1SingleSWITCHING240MHzNPNNPN25V2A100nA ICBO500mV @ 200mA, 2A25V150MHz35V5V-2A4.01mm4.77mm2.41mmROHS3 CompliantLead Free15 Weeks3yes240MHz1W100 @ 1A 2V230mVNo SVHCNo---
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk2012e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-300V1WWIRE260500mA40ZTX6573---1Single-30MHzNPNNPN300V500mA100nA ICBO500mV @ 10mA, 100mA300V30MHz300V5V-500mA4.01mm4.77mm2.41mmROHS3 CompliantLead Free15 Weeks3yes30MHz1W50 @ 100mA 5V500mVNo SVHCNoOther Transistors--
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk-e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.29.00.75160V1WWIRENOT SPECIFIED1ANOT SPECIFIEDZTX6013-R-PSIP-W3Not Qualified1Single---NPN - Darlington1.2V1A10μA1.2V @ 10mA, 1A160V250MHz180V10V-1A4.01mm4.77mm2.41mmROHS3 CompliantLead Free-----2000 @ 500mA 10V----NPN250MHz
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 January 2024
LM317T Voltage Regulator: Functions, Usage, Applications and LM317T vs LM317
Ⅰ. Overview of LM317TⅡ. What functions does LM317T have?Ⅲ. Technical parameters of LM317T voltage regulatorⅣ. Circuit of LM317T voltage regulatorⅤ. What is the difference between LM317T and LM317?Ⅵ.... -
23 January 2024
IRF3205 MOSFET Specifications, Package, Working Principle and Applications
Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ.... -
23 January 2024
Get to Know the TDA2822M Audio Amplifier
Ⅰ. What is TDA2822M?Ⅱ. What are the features of TDA2822M?Ⅲ. Specifications of TDA2822MⅣ. Structure and working principle of TDA2822MⅤ. TDA2822M schematic diagramⅥ. What are the applications of TDA2822M?Ⅶ.... -
24 January 2024
ESP8266 Characteristics, Structure, Application Fields and Other Details
Ⅰ. What is ESP8266?Ⅱ. Characteristics of ESP8266 moduleⅢ. Hardware interface of ESP8266Ⅳ. Development method of ESP8266Ⅴ. Structure of ESP8266Ⅵ. What are the working modes of ESP8266?Ⅶ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.