Diodes Incorporated ZTX653
- Part Number:
- ZTX653
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845191-ZTX653
- Description:
- TRANS NPN 100V 2A E-LINE
- Datasheet:
- ZTX653
Diodes Incorporated ZTX653 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX653.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC100V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency175MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX653
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency175MHz
- Collector Emitter Saturation Voltage230mV
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current2A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX653 Description
ZTX653 is a 100v NPN Silicon planar medium power transistor. The ZTX653 is applied to many fields, like Automotive, Body electronics & lighting, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers. The Operating and Storage Temperature Range is between -55 and 200℃. And the transistor ZTX653 in the TO-92-3 package with 1W power dissipation.
ZTX653 Features
100 Volt VCEO 2 Amp continuous current Low saturation voltage Ptot=1 Watt
ZTX653 Applications
Automotive Body electronics & lighting Communications equipment Datacom module Personal electronics Connected peripherals & printers
ZTX653 is a 100v NPN Silicon planar medium power transistor. The ZTX653 is applied to many fields, like Automotive, Body electronics & lighting, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers. The Operating and Storage Temperature Range is between -55 and 200℃. And the transistor ZTX653 in the TO-92-3 package with 1W power dissipation.
ZTX653 Features
100 Volt VCEO 2 Amp continuous current Low saturation voltage Ptot=1 Watt
ZTX653 Applications
Automotive Body electronics & lighting Communications equipment Datacom module Personal electronics Connected peripherals & printers
ZTX653 More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT NPN 100V 2A 1000mW 3-Pin E-Line / TRANS NPN 100V 2A E-LINE
Transistor NPN ZTX653 ZETEX Ampere=2 V=100 TO92Halfin
NPN transistor, ZTX653 2A Ic 2Vce | Diodes Inc ZTX653
Transistor, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W;
Bipolar Transistor, Npn, 100V; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. ZTX653
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: -; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX653; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT NPN 100V 2A 1000mW 3-Pin E-Line / TRANS NPN 100V 2A E-LINE
Transistor NPN ZTX653 ZETEX Ampere=2 V=100 TO92Halfin
NPN transistor, ZTX653 2A Ic 2Vce | Diodes Inc ZTX653
Transistor, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W;
Bipolar Transistor, Npn, 100V; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. ZTX653
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: -; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX653; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
The three parts on the right have similar specifications to ZTX653.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryDC Current Gain (hFE) (Min) @ Ic, VceReference StandardPolarityTransistor ApplicationFrequency - TransitionReach Compliance CodeView Compare
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ZTX65315 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)100V1WWIRE2602A175MHz40ZTX65331Single1W175MHzNPNNPN100V2A100nA ICBO500mV @ 200mA, 2A100V175MHz230mV120V5V2A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------
-
15 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)300V1WWIRE260500mA30MHz40ZTX65731Single1W30MHzNPNNPN300V500mA100nA ICBO500mV @ 10mA, 100mA300V30MHz500mV300V5V500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead FreeOther Transistors50 @ 100mA 5V-----
-
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2001e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)80V1WWIRE2601A-40ZTX60331Single---NPN - Darlington80V1A10μA1V @ 1mA, 1A80V150MHz1V100V10V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-2000 @ 1A 5VCECCNPNSWITCHING150MHz-
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---180V1W--500mA--ZTX696B3-Single-70MHz-NPN250mV500mA100nA ICBO250mV @ 5mA, 200mA180V-250mV180V5V500mA4.01mm4.77mm2.41mmNo SVHC-RoHS CompliantLead Free-150 @ 200mA 5V----unknown
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