Diodes Incorporated ZTX651STOA
- Part Number:
- ZTX651STOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468680-ZTX651STOA
- Description:
- TRANS NPN 60V 2A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX651STOA
Diodes Incorporated ZTX651STOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX651STOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.75
- Voltage - Rated DC60V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating2A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX651
- Pin Count3
- Reference StandardCECC
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage230mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)40
- Continuous Collector Current2A
- Height4.95mm
- Length4.95mm
- Width3.94mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZTX651STOA Overview
The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 140MHz.A maximum collector current of 2A volts can be achieved.
ZTX651STOA Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX651STOA Applications
There are a lot of Diodes Incorporated
ZTX651STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 140MHz.A maximum collector current of 2A volts can be achieved.
ZTX651STOA Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX651STOA Applications
There are a lot of Diodes Incorporated
ZTX651STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX651STOA More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Through Hole 3.94 mm 4.95 mm 4.95 mm 453.59237 mg NPN Lead Free
Small Signal Bipolar Transistors
French Electronic Distributor since 1988
Compliant Through Hole 3.94 mm 4.95 mm 4.95 mm 453.59237 mg NPN Lead Free
Small Signal Bipolar Transistors
French Electronic Distributor since 1988
The three parts on the right have similar specifications to ZTX651STOA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeFactory Lead TimeNumber of PinsPbfree CodeSubcategoryFrequencyPower DissipationMax Breakdown VoltageREACH SVHCRadiation HardeningPolarityDC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionView Compare
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ZTX651STOAThrough HoleThrough HoleE-Line-3, Formed Leads453.59237mgSILICON-55°C~200°C TJTape & Reel (TR)2006e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.7560V1WWIRE260unknown2A40ZTX6513CECCR-PSIP-W3Not Qualified1SingleSWITCHING175MHzNPNNPN500mV2A100nA ICBO500mV @ 200mA, 2A60V140MHz230mV80V5V402A4.95mm4.95mm3.94mmRoHS CompliantLead Free------------- -
Through HoleThrough HoleE-Line-3, Formed Leads453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2006e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-60V1WWIRE260-2A40ZTX6513CECC--1SingleSWITCHING175MHzNPNNPN60V2A10μA ICBO500mV @ 200mA, 2A60V140MHz230mV80V5V402A4.01mm4.77mm2.41mmROHS3 CompliantLead Free15 Weeks3yesOther Transistors175MHz1W60VNo SVHCNo---
-
Through HoleThrough HoleE-Line-3, Formed Leads453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2006e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-160V1WWIRE260-1A40ZTX6013CECC--1SingleSWITCHING--NPN - Darlington160V1A10μA1.2V @ 10mA, 1A160V150MHz1.1V180V10V-1A4.01mm4.77mm2.41mmROHS3 CompliantLead Free15 Weeks3yes-----NoNPN10000 @ 500mA 10V250MHz
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk-e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.29.00.75160V1WWIRENOT SPECIFIED-1ANOT SPECIFIEDZTX6013-R-PSIP-W3Not Qualified1Single---NPN - Darlington1.2V1A10μA1.2V @ 10mA, 1A160V250MHz-180V10V-1A4.01mm4.77mm2.41mmROHS3 CompliantLead Free---------NPN2000 @ 500mA 10V250MHz
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