Diodes Incorporated ZTX651
- Part Number:
- ZTX651
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463252-ZTX651
- Description:
- TRANS NPN 60V 2A E-LINE
- Datasheet:
- ZTX651
Diodes Incorporated ZTX651 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX651.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency175MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX651
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency175MHz
- Collector Emitter Saturation Voltage230mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)100
- Continuous Collector Current2A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX651 Overview
A collector emitter saturation voltage of 230mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 175MHz.A maximum collector current of 2A volts is possible.
ZTX651 Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
ZTX651 Applications
There are a lot of Diodes Incorporated ZTX651 applications of single BJT transistors.
Inverter
Interface
Muting
Driver
A collector emitter saturation voltage of 230mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 175MHz.A maximum collector current of 2A volts is possible.
ZTX651 Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
ZTX651 Applications
There are a lot of Diodes Incorporated ZTX651 applications of single BJT transistors.
Inverter
Interface
Muting
Driver
ZTX651 More Descriptions
INTERSIL CA3083Z Bipolar Transistor Array, NPN, 15 V, 500 mW, 100 mA, 76 hFE, DIP
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX651 Series NPN 2 A 60 V Silicon Planar Medium Power Transistor - TO-92-3
NPN transistor, ZTX651 2A Ic 2Vce | Diodes Inc ZTX651
TRANSISTOR, NPN, 60V, 2A, E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: 100hFE; Transistor
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. ZTX651
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX651 Series NPN 2 A 60 V Silicon Planar Medium Power Transistor - TO-92-3
NPN transistor, ZTX651 2A Ic 2Vce | Diodes Inc ZTX651
TRANSISTOR, NPN, 60V, 2A, E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: 100hFE; Transistor
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. ZTX651
The three parts on the right have similar specifications to ZTX651.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeJESD-30 CodeQualification StatusPolarityDC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionReference StandardTransistor ApplicationView Compare
-
ZTX65115 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk1997e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors60V1WWIRE2602A175MHz40ZTX65131Single1W175MHzNPNNPN60V2A100nA ICBO500mV @ 200mA, 2A60V175MHz230mV80V5V1002A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free---------
-
-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~200°C TJBulk-e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-160V1WWIRENOT SPECIFIED1A-NOT SPECIFIEDZTX60131Single---NPN - Darlington1.2V1A10μA1.2V @ 10mA, 1A160V250MHz-180V10V-1A4.01mm4.77mm2.41mm--ROHS3 CompliantLead Free8541.29.00.75R-PSIP-W3Not QualifiedNPN2000 @ 500mA 10V250MHz--
-
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2001e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-80V1WWIRE2601A-40ZTX60331Single---NPN - Darlington80V1A10μA1V @ 1mA, 1A80V150MHz1V100V10V-1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free---NPN2000 @ 1A 5V150MHzCECCSWITCHING
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----12V1W--3A--ZTX688B3-Single-150MHz-NPN350mV3A100nA ICBO350mV @ 20mA, 3A12V-350mV12V5V-3A4.01mm4.77mm2.41mmNo SVHC-RoHS CompliantLead Free----500 @ 100mA 2V---
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