Diodes Incorporated ZTX614
- Part Number:
- ZTX614
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465172-ZTX614
- Description:
- TRANS NPN DARL 100V 0.8A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX614
Diodes Incorporated ZTX614 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX614.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- Power - Max1W
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- JEDEC-95 CodeTO-226AE
- Vce Saturation (Max) @ Ib, Ic1.25V @ 8mA, 800mA
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)800mA
- RoHS StatusROHS3 Compliant
ZTX614 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
ZTX614 Features
the DC current gain for this device is 10000 @ 500mA 5V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
ZTX614 Applications
There are a lot of Rochester Electronics, LLC
ZTX614 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
ZTX614 Features
the DC current gain for this device is 10000 @ 500mA 5V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
ZTX614 Applications
There are a lot of Rochester Electronics, LLC
ZTX614 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX614 More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE
ZTX614 Series 100 V 0.8 A NPN Silicon Planar Medium Power Darlington Transistor
DARLINGTON TRANSISTOR, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1W; DC Collector Current:800mA; DC Current Gain hFE:10000; Operating Temperature Range:-55°C to 200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:800mA; Collector Emitter Voltage Vces:1.25V; Continuous Collector Current Ic Max:800mA; Current Ic Continuous a Max:800mA; Current Ic hFE:500mA; Device Marking:ZTX614; Full Power Rating Temperature:25°C; Hfe Min:10000; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:120V
ZTX614 Series 100 V 0.8 A NPN Silicon Planar Medium Power Darlington Transistor
DARLINGTON TRANSISTOR, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1W; DC Collector Current:800mA; DC Current Gain hFE:10000; Operating Temperature Range:-55°C to 200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:800mA; Collector Emitter Voltage Vces:1.25V; Continuous Collector Current Ic Max:800mA; Current Ic Continuous a Max:800mA; Current Ic hFE:500mA; Device Marking:ZTX614; Full Power Rating Temperature:25°C; Hfe Min:10000; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:120V
The three parts on the right have similar specifications to ZTX614.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeSubcategoryHTS CodeReference StandardPolarityFrequency - TransitionView Compare
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ZTX614Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke3noObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLE3O-PBCY-T3COMMERCIAL11WNPNNPN - Darlington10000 @ 500mA 5V100nA ICBOTO-226AE1.25V @ 8mA, 800mA100V800mAROHS3 Compliant------------------------------------ -
Through HoleE-Line-3, Formed Leads-SILICON-55°C~200°C TJTape & Box (TB)e3yesActive1 (Unlimited)3Matte Tin (Sn)-260-403--1-NPNNPN100 @ 1A 2V100nA ICBO-500mV @ 200mA, 2A--ROHS3 Compliant15 WeeksThrough Hole3453.59237mg2012EAR9925V1WWIRE2A240MHzZTX649Single1WSWITCHING240MHz25V2A25V150MHz230mV35V5V2A4.01mm4.77mm2.41mmNo SVHCNoLead Free-----
-
Through HoleE-Line-3-SILICON-55°C~200°C TJBulke3yesActive1 (Unlimited)3Matte Tin (Sn)-260-403--1-NPNNPN50 @ 100mA 5V100nA ICBO-500mV @ 10mA, 100mA--ROHS3 Compliant15 WeeksThrough Hole3453.59237mg2012EAR99300V1WWIRE500mA30MHzZTX657Single1W-30MHz300V500mA300V30MHz500mV300V5V500mA4.01mm4.77mm2.41mmNo SVHCNoLead FreeOther Transistors----
-
Through HoleE-Line-3, Formed Leads-SILICON-55°C~200°C TJTape & Reel (TR)e3-Obsolete1 (Unlimited)3MATTE TIN-260unknown403R-PSIP-W3Not Qualified1--NPN - Darlington2000 @ 1A 5V10μA-1.5V @ 1mA, 1A--RoHS Compliant-Through Hole---EAR99120V1WWIRE1A-ZTX605Single1WSWITCHING-1.5V1A120V150MHz-140V10V1A-----Lead Free-8541.29.00.75CECCNPN150MHz
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