Diodes Incorporated ZTX601STZ
- Part Number:
- ZTX601STZ
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2466622-ZTX601STZ
- Description:
- TRANS NPN DARL 160V 1A E-LINE
- Datasheet:
- ZTX601STZ
Diodes Incorporated ZTX601STZ technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX601STZ.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTape & Box (TB)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC160V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX601
- Pin Count3
- Reference StandardCECC
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 10mA, 1A
- Collector Emitter Breakdown Voltage160V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage1.1V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current1A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX601STZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 10mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 1A volts.
ZTX601STZ Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX601STZ Applications
There are a lot of Diodes Incorporated
ZTX601STZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 10mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 1A volts.
ZTX601STZ Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX601STZ Applications
There are a lot of Diodes Incorporated
ZTX601STZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX601STZ More Descriptions
ZTX601 Series 160V 1A NPN Silicon Planar Medium Power Darlington Transistor TO92
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 160V 1A Automotive 3-Pin E-Line Box
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 160V 1A Automotive 3-Pin E-Line Box
The three parts on the right have similar specifications to ZTX601STZ.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeJESD-30 CodeQualification StatusReach Compliance CodePower DissipationView Compare
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ZTX601STZ15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)160V1WWIRE2601A40ZTX6013CECC1NPNSingleSWITCHINGNPN - Darlington160V1A2000 @ 500mA 10V10μA1.2V @ 10mA, 1A160V150MHz1.1V250MHz180V10V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free------
-
-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~200°C TJBulk-e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)160V1WWIRENOT SPECIFIED1ANOT SPECIFIEDZTX6013-1NPNSingle-NPN - Darlington1.2V1A2000 @ 500mA 10V10μA1.2V @ 10mA, 1A160V250MHz-250MHz180V10V1A4.01mm4.77mm2.41mm--ROHS3 CompliantLead Free8541.29.00.75R-PSIP-W3Not Qualified--
-
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2001e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)80V1WWIRE2601A40ZTX6033CECC1NPNSingleSWITCHINGNPN - Darlington80V1A2000 @ 1A 5V10μA1V @ 1mA, 1A80V150MHz1V150MHz100V10V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Through HoleThrough HoleE-Line-3, Formed Leads--SILICON-55°C~200°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN120V1WWIRE2601A40ZTX6053CECC1NPNSingleSWITCHINGNPN - Darlington1.5V1A2000 @ 1A 5V10μA1.5V @ 1mA, 1A120V150MHz-150MHz140V10V1A-----RoHS CompliantLead Free8541.29.00.75R-PSIP-W3Not Qualifiedunknown1W
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