Diodes Incorporated ZTX558STOB

Name: ZTX558STOB
Brand: Diodes Incorporated
SKU: 3585560-ZTX558STOB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ZTX558STOB

Manufacturer:: Diodes Incorporated

Ventron No:: 3585560-ZTX558STOB

Description:: TRANS PNP 400V 0.2A E-LINE

ECAD Model:

Datasheet:: ZTX558STOB

Specifications

Diodes Incorporated ZTX558STOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX558STOB.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Weight
453.59237mg
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-400V
Max Power Dissipation
1W
Reach Compliance Code
unknown
Current Rating
-200mA
Base Part Number
ZTX558
Pin Count
3
Element Configuration
Single
Gain Bandwidth Product
50MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
200mA
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-400V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-200mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

ZTX558STOB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.Collector current can be as low as 200mA volts at its maximum.

ZTX558STOB Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA

ZTX558STOB Applications
There are a lot of Diodes Incorporated
ZTX558STOB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

ZTX558STOB More Descriptions

Bipolar Transistors - BJT PNP High Voltage
Compliant Through Hole 2.41 mm 4.01 mm 4.77 mm 453.59237 mg PNP Lead Free
TRANS PNP 400V 0.2A E-LINE

Product Comparison

The three parts on the right have similar specifications to ZTX558STOB.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Reach Compliance Code

Current Rating

Base Part Number

Pin Count

Element Configuration

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Frequency - Transition

Factory Lead Time

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation

Transistor Application

Polarity/Channel Type

Transition Frequency

REACH SVHC

Radiation Hardening

View Compare
ZTX558STOB

Diodes Incorporated

Through Hole

Through Hole

E-Line-3, Formed Leads

453.59237mg

-55°C~200°C TJ

Tape & Reel (TR)

2012

Obsolete

1 (Unlimited)

-400V

1W

unknown

-200mA

ZTX558

3

Single

50MHz

PNP

500mV

200mA

100 @ 50mA 10V

100nA

500mV @ 6mA, 50mA

400V

200mA

-500mV

-400V

-5V

-200mA

4.01mm

4.77mm

2.41mm

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
ZTX557STOA

Diodes Incorporated

-

Through Hole

E-Line-3, Formed Leads

-

-55°C~200°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

compliant

-

ZTX557

3

-

-

PNP

-

-

50 @ 50mA 10V

100nA ICBO

300mV @ 5mA, 50mA

-

500mA

-

-

-

-

-

-

-

RoHS Compliant

-

1W

300V

75MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ZTX558STOB vs ZTX557STOA
ZTX550STZ

Diodes Incorporated

Through Hole

Through Hole

E-Line-3, Formed Leads

453.59237mg

-55°C~200°C TJ

Tape & Box (TB)

2001

Active

1 (Unlimited)

-45V

1W

-

-1A

ZTX550

3

Single

150MHz

PNP

45V

1A

100 @ 150mA 10V

100nA ICBO

250mV @ 15mA, 150mA

45V

-

-250mV

60V

-5V

-1A

4.01mm

4.77mm

2.41mm

ROHS3 Compliant

Lead Free

-

-

-

15 Weeks

3

SILICON

e3

yes

3

EAR99

Matte Tin (Sn)

WIRE

260

150MHz

40

1

1W

SWITCHING

PNP

150MHz

No SVHC

No

ZTX558STOB vs ZTX550STZ
ZTX551STZ

Diodes Incorporated

Through Hole

Through Hole

E-Line-3, Formed Leads

453.59237mg

-55°C~200°C TJ

Tape & Box (TB)

2001

Active

1 (Unlimited)

-60V

1W

-

-1A

ZTX551

3

Single

150MHz

PNP

60V

1A

50 @ 150mA 10V

100nA ICBO

350mV @ 15mA, 150mA

60V

-

-350mV

80V

-5V

-1A

4.01mm

4.77mm

2.41mm

ROHS3 Compliant

Lead Free

-

-

-

15 Weeks

3

SILICON

e3

yes

3

EAR99

Matte Tin (Sn)

WIRE

260

150MHz

40

1

1W

SWITCHING

PNP

150MHz

No SVHC

No

ZTX558STOB vs ZTX551STZ