Diodes Incorporated ZTX553

ZTX553 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

ZTX553 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz


ZTX553 Applications
There are a lot of Diodes Incorporated
ZTX553 applications of single BJT transistors.


Inverter
Interface
Driver
Muting