Diodes Incorporated ZTX453
- Part Number:
- ZTX453
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463243-ZTX453
- Description:
- TRANS NPN 100V 1A E-LINE
- Datasheet:
- ZTX453
Diodes Incorporated ZTX453 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX453.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierE-Line
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX453
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage100V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage700mV
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX453 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 15mA, 150mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX453 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX453 Applications
There are a lot of Diodes Incorporated
ZTX453 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 15mA, 150mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX453 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX453 Applications
There are a lot of Diodes Incorporated
ZTX453 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX453 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc ZTX453 NPN 1A 1W BiPolar Transistor
Bipolar Transistors - BJT NPN Medium Power
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 700mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Device Marking: ZTX453; Gain Bandwidth ft Min: 150MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
Diodes Inc ZTX453 NPN 1A 1W BiPolar Transistor
Bipolar Transistors - BJT NPN Medium Power
TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 700mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Device Marking: ZTX453; Gain Bandwidth ft Min: 150MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V
The three parts on the right have similar specifications to ZTX453.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeTerminal FinishHTS CodeReference StandardPolarityTransistor ApplicationView Compare
-
ZTX45315 WeeksTinThrough HoleThrough HoleE-Line-33453.59237mgSILICONE-Line-55°C~200°C TJBulk1997e3yesActive1 (Unlimited)3EAR99Other Transistors100V1WWIRE2601A150MHz40ZTX45331Single1W150MHzNPNNPN100V1A40 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA100V150MHz700mV120V5V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-------
-
--Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg---55°C~200°C TJTape & Reel (TR)2012--Obsolete1 (Unlimited)---100V1W--1A--ZTX4533-Single-150MHz-NPN700mV1A40 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA100V--120V5V1A4.01mm4.77mm2.41mm--RoHS CompliantLead Freeunknown-----
-
--Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg---55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---140V1W--1A--ZTX4553-Single-100MHz-NPN700mV1A100 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA140V-700mV160V5V1A4.01mm4.77mm2.41mm--RoHS CompliantLead Freeunknown-----
-
15 Weeks-Through HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON--55°C~175°C TJTape & Box (TB)2012e3yesActive1 (Unlimited)3--100V680mWWIRE260500mA-40ZTX41531Single-40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV260V6V500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-Matte Tin (Sn)8541.21.00.95CECCNPNSWITCHING
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