Diodes Incorporated ZTX450
- Part Number:
- ZTX450
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465498-ZTX450
- Description:
- TRANS NPN 45V 1A E-LINE
- Datasheet:
- ZTX450
Diodes Incorporated ZTX450 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX450.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Reference StandardCECC
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX450 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 1A volts is possible.
ZTX450 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX450 Applications
There are a lot of Diodes Incorporated
ZTX450 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 1A volts is possible.
ZTX450 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX450 Applications
There are a lot of Diodes Incorporated
ZTX450 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX450 More Descriptions
Bipolar Transistor (BJT) NPN 45V 1A 150MHz 1W E-Line TO-92
ZTX450 Series NPN 1 A 45 V Silicon Planar Medium Power Transistor - TO-92-3
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR NPN 45V 1000MA TO92-3
NPN transistor, ZTX450 1A Ic 10Vce | Diodes Inc ZTX450
BIPOLAR TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:150MHz; Power Dissipation, Pd:1W; DC Collector Current:1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
TRANSISTOR, NPN E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Ptot Max:1W; Transistor Type:Power Bipolar; Voltage Vcbo:60V
ZTX450 Series NPN 1 A 45 V Silicon Planar Medium Power Transistor - TO-92-3
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR NPN 45V 1000MA TO92-3
NPN transistor, ZTX450 1A Ic 10Vce | Diodes Inc ZTX450
BIPOLAR TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:150MHz; Power Dissipation, Pd:1W; DC Collector Current:1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
TRANSISTOR, NPN E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Ptot Max:1W; Transistor Type:Power Bipolar; Voltage Vcbo:60V
The three parts on the right have similar specifications to ZTX450.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountReference StandardNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeBase Part NumberHTS CodePolarityView Compare
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ZTX45015 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors45V1WWIRE2601A150MHz403CECC1Single1WSWITCHING150MHzNPNNPN45V1A100 @ 150mA 10V100nA ICBO250mV @ 15mA, 150mA45V150MHz250mV60V5V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----140V1W--1A--3--Single--100MHz-NPN700mV1A100 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA140V-700mV160V5V1A4.01mm4.77mm2.41mm--RoHS CompliantLead FreeunknownZTX455--
-
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~175°C TJTape & Box (TB)2012e3yesActive1 (Unlimited)3-Matte Tin (Sn)-100V680mWWIRE260500mA-403CECC1Single-SWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV260V6V500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-ZTX4158541.21.00.95NPN
-
-Through HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors30V1WWIRE2601A150MHz403-1Single1W-150MHzNPNNPN30V1A100 @ 500mA 2V100nA ICBO1V @ 200mA, 2A30V150MHz1V50V5V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 Compliant-----
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