Diodes Incorporated ZTX1049A
- Part Number:
- ZTX1049A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463286-ZTX1049A
- Description:
- TRANS NPN 25V 4A E-LINE
- Datasheet:
- ZTX1049A
Diodes Incorporated ZTX1049A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX1049A.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierE-Line
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX1049A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A 2V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic220mV @ 50mA, 4A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency180MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current4A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX1049A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 50mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZTX1049A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 220mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 180MHz
ZTX1049A Applications
There are a lot of Diodes Incorporated
ZTX1049A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 50mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZTX1049A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 220mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 180MHz
ZTX1049A Applications
There are a lot of Diodes Incorporated
ZTX1049A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX1049A More Descriptions
ZTX1049A Series NPN 4 A 25 V Silicon Planar Medium Power Transistor - TO-92-3
Small Signal Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 25V 4A 1500mW 3-Pin E-Line
Pwr Low Sat Transistor Ep3Sc Bulk 4K
Small Signal Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 25V 4A 1500mW 3-Pin E-Line
Pwr Low Sat Transistor Ep3Sc Bulk 4K
The three parts on the right have similar specifications to ZTX1049A.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionWeightTerminal PositionView Compare
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ZTX1049A15 WeeksThrough HoleThrough HoleE-Line-33SILICONE-Line-55°C~200°C TJBulk2012e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors25V1WWIRE2604A180MHz40ZTX1049A31Single1WSWITCHING180MHzNPNNPN25V4A300 @ 1A 2V10nA220mV @ 50mA, 4A25V180MHz80V5V4A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------
-
--Through HoleE-Line-3, Formed Leads----55°C~200°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----------ZTX1151A-------PNP--250 @ 500mA 2V100nA240mV @ 250mA, 3A------------compliant1W40V3A145MHz--
-
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3---55°C~200°C TJTape & Box (TB)2006e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-17.5V1W--4A150MHz-ZTX1048A-1Single1W-150MHz-NPN17.5V4A300 @ 1A 2V10nA245mV @ 20mA, 4A17.5V-50V5V4A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-----453.59237mg-
-
-Through HoleThrough HoleE-Line-33SILICON--55°C~200°C TJBulk2006e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors74V1WWIRE2603A140MHz40-31Single1WSWITCHING140MHzNPNNPN75V3A300 @ 1A 2V10nA250mV @ 100mA, 3A75V140MHz150V5V3A4.01mm4.77mm2.41mmNo SVHCNoROHS3 Compliant------453.59237mgBOTTOM
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