Diodes Incorporated ZTX1047A
- Part Number:
- ZTX1047A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585824-ZTX1047A
- Description:
- TRANS NPN 10V 4A E-LINE
- Datasheet:
- ZTX1047A
Diodes Incorporated ZTX1047A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX1047A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.75
- Voltage - Rated DC10V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX1047A
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)190mV
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A 2V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic190mV @ 20mA, 4A
- Collector Emitter Breakdown Voltage10V
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)35V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current4A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- RoHS StatusRoHS Compliant
ZTX1047A Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 190mV @ 20mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 4A volts is possible.
ZTX1047A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 190mV @ 20mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 150MHz
ZTX1047A Applications
There are a lot of Diodes Incorporated
ZTX1047A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 190mV @ 20mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 4A volts is possible.
ZTX1047A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 190mV @ 20mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 150MHz
ZTX1047A Applications
There are a lot of Diodes Incorporated
ZTX1047A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX1047A More Descriptions
TRANS NPN 10V 4A E-LINE
OEMs, CMs ONLY (NO BROKERS)
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to ZTX1047A.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRoHS StatusFactory Lead TimeNumber of PinsFrequencyPower DissipationREACH SVHCRadiation HardeningLead FreeSubcategoryReach Compliance CodeCollector Emitter Saturation VoltagehFE MinView Compare
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ZTX1047AThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk2006e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.7510V1WWIRE2604A40ZTX1047A3R-PSIP-W3Not Qualified1SingleSWITCHING150MHzNPNNPN190mV4A300 @ 1A 2V10nA190mV @ 20mA, 4A10V150MHz35V5V4A4.01mm4.77mm2.41mmRoHS Compliant------------
-
Through HoleThrough HoleE-Line-3, Formed Leads453.59237mg--55°C~200°C TJTape & Box (TB)2006e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-17.5V1W--4A-ZTX1048A---1Single-150MHz-NPN17.5V4A300 @ 1A 2V10nA245mV @ 20mA, 4A17.5V-50V5V4A4.01mm4.77mm2.41mmROHS3 Compliant15 Weeks3150MHz1WNo SVHCNoLead Free----
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Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN-160V1WWIRE2606A40ZTX1056A3-Not Qualified1Single-120MHzNPNNPN160V3A300 @ 500mA 10V10nA300mV @ 200mA, 3A160V120MHz200V5V3A4.01mm4.77mm2.41mmRoHS Compliant-3120MHz1WNo SVHC--Other Transistorsunknown--
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~200°C TJBulk--Obsolete1 (Unlimited)3EAR99---40V1WWIRE--3A-ZTX1151A3-Not Qualified1Single-145MHzPNPPNP240mV3A250 @ 500mA 2V100nA240mV @ 250mA, 3A40V145MHz-45V-5V-3A4.95mm4.95mm3.94mmRoHS Compliant-3145MHz1W--Contains LeadOther Transistors--180mV270
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