Rohm Semiconductor US6M2TR
- Part Number:
- US6M2TR
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2847936-US6M2TR
- Description:
- MOSFET N/P-CH 30V/20V TUMT6
- ECAD Model:
-
- Datasheet:
- US6M2TR
Rohm Semiconductor US6M2TR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor US6M2TR.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-SMD, Flat Leads
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Published2001
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance340MOhm
- Terminal FinishTIN COPPER
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Peak Reflow Temperature (Cel)260
- Current Rating1.5A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*M2
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs240m Ω @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds80pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.5A 1A
- Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
- Drain to Source Voltage (Vdss)30V 20V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)1A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Nominal Vgs1.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
US6M2TR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet US6M2TR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of US6M2TR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet US6M2TR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of US6M2TR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
US6M2TR More Descriptions
Trans MOSFET N/P-CH Si 30V/20V 1.5A/1A 6-Pin TUMT T/R
SWITCHING MOSFET TUMT6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power
SWITCHING MOSFET TUMT6; Transistor Type:Power MOSFET; Transistor Polarity:NP; Typ Voltage Vds:30V; Current, Id Cont:1.5A; On State Resistance:240mohm; Voltage Vgs Rds on Measurement:4.5V; Typ Voltage Vgs th:1.5V; Case Style:TUMT6; ;RoHS Compliant: Yes
SWITCHING MOSFET TUMT6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power
SWITCHING MOSFET TUMT6; Transistor Type:Power MOSFET; Transistor Polarity:NP; Typ Voltage Vds:30V; Current, Id Cont:1.5A; On State Resistance:240mohm; Voltage Vgs Rds on Measurement:4.5V; Typ Voltage Vgs th:1.5V; Case Style:TUMT6; ;RoHS Compliant: Yes
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