Fairchild/ON Semiconductor TN6726A_D26Z
- Part Number:
- TN6726A_D26Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2470485-TN6726A_D26Z
- Description:
- TRANS PNP 30V 1.5A TO226
- ECAD Model:
-
- Datasheet:
- TN6726A, NZT6726
Fairchild/ON Semiconductor TN6726A_D26Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TN6726A_D26Z.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device PackageTO-226
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberTN6726A
- Power - Max1W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)1.5A
TN6726A_D26Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.TO-226 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
TN6726A_D26Z Features
the DC current gain for this device is 50 @ 1A 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-226
TN6726A_D26Z Applications
There are a lot of ON Semiconductor
TN6726A_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.TO-226 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
TN6726A_D26Z Features
the DC current gain for this device is 50 @ 1A 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-226
TN6726A_D26Z Applications
There are a lot of ON Semiconductor
TN6726A_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TN6726A_D26Z More Descriptions
Trans GP BJT PNP 30V 1.5A 3-Pin TO-226 T/R
Electromechanical Relay Double Pole Double Throw (DPDT) 2A 5VDC 178&8486; Through Hole
TRANS PNP 30V 1.5A TO226
PNP DBL-DIF, SI EPTXL PLNR
Electromechanical Relay Double Pole Double Throw (DPDT) 2A 5VDC 178&8486; Through Hole
TRANS PNP 30V 1.5A TO226
PNP DBL-DIF, SI EPTXL PLNR
The three parts on the right have similar specifications to TN6726A_D26Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
TN6726A_D26ZThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)TO-226-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)TN6726A1WPNP50 @ 1A 1V100nA ICBO500mV @ 100mA, 1A30V1.5A- -
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)TO-226-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-1WNPN50 @ 1A 1V100nA ICBO500mV @ 100mA, 1A30V2A
-
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)TO-226-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-1WNPN40 @ 30mA 10V100nA ICBO750mV @ 3mA, 30mA300V200mA
-
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)TO-226-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-1WNPN50 @ 1A 1V100nA ICBO500mV @ 100mA, 1A30V2A
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