ON Semiconductor TIP29AG
- Part Number:
- TIP29AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467158-TIP29AG
- Description:
- TRANS NPN 60V 1A TO-220AB
- Datasheet:
- TIP29AG
ON Semiconductor TIP29AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP29AG.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP29
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP29AG Overview
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 1A volts is possible.
TIP29AG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
TIP29AG Applications
There are a lot of ON Semiconductor
TIP29AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 1A volts is possible.
TIP29AG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
TIP29AG Applications
There are a lot of ON Semiconductor
TIP29AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP29AG More Descriptions
TIP Series 60 V 1 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
1.0 A, 60 V, NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 60V 1A 2000mW 3-Pin(3 Tab) TO-220AB Tube
BIPOLAR Transistor, NPN, 60V TO-220; Tra
60V 30W 1A 15@1A4V 3MHz NPN 700mV@1A125mA -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Collector Emitter Saturation Voltage, Vce(sat):15V; Power Dissipation, Pd:30W; DC Current Gain Min (hfe):15; Package/Case:3-TO-220 ;RoHS Compliant: Yes
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
1.0 A, 60 V, NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 60V 1A 2000mW 3-Pin(3 Tab) TO-220AB Tube
BIPOLAR Transistor, NPN, 60V TO-220; Tra
60V 30W 1A 15@1A4V 3MHz NPN 700mV@1A125mA -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Collector Emitter Saturation Voltage, Vce(sat):15V; Power Dissipation, Pd:30W; DC Current Gain Min (hfe):15; Package/Case:3-TO-220 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP29AG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionWeightTerminal FinishHeightLengthWidthView Compare
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TIP29AGACTIVE (Last Updated: 1 week ago)2 WeeksTinThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors60V2W2601A3MHz40TIP2931Single2WCOLLECTORSWITCHING3MHzNPNNPN60V1A15 @ 1A 4V300μATO-220AB700mV @ 125mA, 1A60V3MHz700mV25V60V5V40UnknownNoROHS3 CompliantLead Free---------------
-
---Through HoleTO-220-3---150°C TJTube---Obsolete1 (Unlimited)---60V2W-1A3MHz-TIP29-1Single2W--3MHz-NPN60V1A15 @ 1A 4V300μA-700mV @ 125mA, 1A60V---60V5V15--RoHS CompliantLead FreeThrough HoleTO-220-3150°C-65°CNPN2W60V1A3MHz-----
-
ACTIVE (Last Updated: 3 days ago)2 Weeks-Through HoleTO-220-3NO3SILICON-65°C~150°C TJTube1999e3yesActive1 (Unlimited)3EAR99Other Transistors80V2W2601A3MHz40TIP2931Single2WCOLLECTORSWITCHING3MHzNPNNPN80V1A15 @ 1A 4V300μATO-220AB700mV @ 125mA, 1A80V3MHz700mV-80V5V40No SVHCNoROHS3 CompliantLead Free---------4.535924gTin (Sn)6.35mm6.35mm25.4mm
-
ACTIVE (Last Updated: 3 days ago)2 Weeks-Through HoleTO-220-3-3-150°C TJBulk2013--Active1 (Unlimited)---40V2W-1A3MHz-TIP29-1Single2W--3MHz-NPN40V1A15 @ 1A 4V300μA-700mV @ 125mA, 1A60V-700mV40V40V5V15-NoROHS3 CompliantLead FreeThrough HoleTO-220-3150°C-65°CNPN2W40V1A3MHz1.214g-6.35mm6.35mm6.35mm
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