ON Semiconductor TIP125G
- Part Number:
- TIP125G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464715-TIP125G
- Description:
- TRANS PNP DARL 60V 5A TO220AB
- Datasheet:
- TIP125G
ON Semiconductor TIP125G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP125G.
- Lifecycle StatusACTIVE (Last Updated: 23 hours ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation65W
- Peak Reflow Temperature (Cel)260
- Current Rating-5A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP12*
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation65W
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationAMPLIFIER
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic4V @ 20mA, 5A
- Collector Emitter Breakdown Voltage60V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current5A
- Height4.82mm
- Length15.75mm
- Width10.28mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP125G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 20mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
TIP125G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP125G Applications
There are a lot of ON Semiconductor
TIP125G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 20mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
TIP125G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP125G Applications
There are a lot of ON Semiconductor
TIP125G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP125G More Descriptions
TIP Series 60 V 5 A PNP Medium Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Medium Power PNP Darlington Bipolar Power Transistor
Trans Darlington PNP 60V 5A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
Transistor TIP125 Darlington PNP 60Volt 5A TO-220AB
ON Semi TIP125G PNP Darlington Transistor, 8 A 60 V HFE:1000, 4-Pin TO-220 | ON Semiconductor TIP125G
TRANSISTOR, PNP, -60V, 65W, TO-220AB
TIP125: . . . designed for general-purpose amplifier and low-speed switching applications.
Bipolar Transistor, Pnp -60V To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:5A; Power Dissipation Pd:65W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:- Rohs Compliant: Yes
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Medium Power PNP Darlington Bipolar Power Transistor
Trans Darlington PNP 60V 5A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
Transistor TIP125 Darlington PNP 60Volt 5A TO-220AB
ON Semi TIP125G PNP Darlington Transistor, 8 A 60 V HFE:1000, 4-Pin TO-220 | ON Semiconductor TIP125G
TRANSISTOR, PNP, -60V, 65W, TO-220AB
TIP125: . . . designed for general-purpose amplifier and low-speed switching applications.
Bipolar Transistor, Pnp -60V To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:5A; Power Dissipation Pd:65W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:- Rohs Compliant: Yes
The three parts on the right have similar specifications to TIP125G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP125GACTIVE (Last Updated: 23 hours ago)2 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-60V65W260-5A40TIP12*31PNPSingle65WCOLLECTOR2WAMPLIFIERPNP - Darlington60V5A1000 @ 3A 3V500μATO-220AB4V @ 20mA, 5A60V2V60V5V10005A4.82mm15.75mm10.28mmNo SVHCNoROHS3 CompliantLead Free---------------
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----------------------------------------------------100V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A
-
----------------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
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----------------------------------------------------100V2.5V @ 80mA, 8ANPN - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 3A, 4V50µA8A
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