Fairchild/ON Semiconductor TIP125
- Part Number:
- TIP125
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463263-TIP125
- Description:
- TRANS PNP DARL 60V 5A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP125-27
Fairchild/ON Semiconductor TIP125 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP125.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Case ConnectionCOLLECTOR
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current500μA
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 3V
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic4V @ 20mA, 5A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency4MHz
- Frequency - Transition4MHz
- Power Dissipation-Max (Abs)65W
- RoHS StatusNon-RoHS Compliant
TIP125 Overview
This device has a DC current gain of 1000 @ 3A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 4V @ 20mA, 5A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 500μA volts is possible.
TIP125 Features
the DC current gain for this device is 1000 @ 3A 3V
the vce saturation(Max) is 4V @ 20mA, 5A
a transition frequency of 4MHz
TIP125 Applications
There are a lot of Central Semiconductor Corp
TIP125 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 3A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 4V @ 20mA, 5A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 500μA volts is possible.
TIP125 Features
the DC current gain for this device is 1000 @ 3A 3V
the vce saturation(Max) is 4V @ 20mA, 5A
a transition frequency of 4MHz
TIP125 Applications
There are a lot of Central Semiconductor Corp
TIP125 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP125 More Descriptions
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor PNP Darlington TIP125 SGS THOMSON Ampere=8 V=60 TO220
Transistor Darlington PNP 60V 5A 3-Pin TO-220 Tube - Rail/Tube
TIP125 Series 60 V 5 A Complementary Power Darlington Transistor TO-220-3
Power Bipolar, PNP, 3V, 12mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON Transistor, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:-; Power Dissipation Pd:65W;
TRANSISTOR, DARLINGTON TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 5A; Continuous Collector Current Ic Max: 5A; Current Ic Continuous a Max: 5A; Current Ic hFE: 3A; Full Power Rating Temperature: 25°C; Hfe Min: 1000; No. of Transistors: 1; Power Dissipation Ptot Max: 65W; Transistor Type: Power Darlington; Voltage Vcbo: 60V
Transistor PNP Darlington TIP125 SGS THOMSON Ampere=8 V=60 TO220
Transistor Darlington PNP 60V 5A 3-Pin TO-220 Tube - Rail/Tube
TIP125 Series 60 V 5 A Complementary Power Darlington Transistor TO-220-3
Power Bipolar, PNP, 3V, 12mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON Transistor, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:-; Power Dissipation Pd:65W;
TRANSISTOR, DARLINGTON TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 5A; Continuous Collector Current Ic Max: 5A; Current Ic Continuous a Max: 5A; Current Ic hFE: 3A; Full Power Rating Temperature: 25°C; Hfe Min: 1000; No. of Transistors: 1; Power Dissipation Ptot Max: 65W; Transistor Type: Power Darlington; Voltage Vcbo: 60V
The three parts on the right have similar specifications to TIP125.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsCase ConnectionPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceJEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP125Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJBulke0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.95Other TransistorsSINGLENOT SPECIFIEDnot_compliantNOT SPECIFIED3Not Qualified1COLLECTORPNPPNP - Darlington4V500μA1000 @ 3A 3VTO-220AB4V @ 20mA, 5A60V4MHz4MHz65WNon-RoHS Compliant---------------
-
------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
------------------------------------80V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A
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