Central Semiconductor Corp TIP101
- Part Number:
- TIP101
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470713-TIP101
- Description:
- TRANS NPN 80V 8A TO220
- Datasheet:
- TIP100-102,105-07
Central Semiconductor Corp TIP101 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp TIP101.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation80W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation80W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)2.5V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency4MHz
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current8A
- RoHS StatusRoHS Compliant
TIP101 Overview
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 8A volts.
TIP101 Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
TIP101 Applications
There are a lot of Central Semiconductor Corp
TIP101 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 8A volts.
TIP101 Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
TIP101 Applications
There are a lot of Central Semiconductor Corp
TIP101 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP101 More Descriptions
Electronics TIP101 Transistor NPN Silicon Darlington 80V IC=8A TO-220 Case With Base-ter Shunt Resistors
T-NPN SI- DARLINGTONNTE Electronics
Silicon NPN Darlington Power Amp, Switch
TRANS NPN DARL 80V 8A TO220-3
T-NPN SI- DARLINGTONNTE Electronics
Silicon NPN Darlington Power Amp, Switch
TRANS NPN DARL 80V 8A TO220-3
The three parts on the right have similar specifications to TIP101.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP101Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJBulk2012e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.95Other Transistors80WNOT SPECIFIEDNOT SPECIFIED3R-PSFM-T3Not Qualified1NPNSingle80WCOLLECTORSWITCHINGNPN - Darlington2.5V8A1000 @ 3A 4V50μATO-220AB2.5V @ 80mA, 8A80V4MHz4MHz80V5V10008ARoHS Compliant---------------
-
-------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
-------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
-------------------------------------------100V2.5V @ 80mA, 8ANPN - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 3A, 4V50µA8A
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