STMicroelectronics STX817A

Name: STX817A
Brand: STMicroelectronics
SKU: 2472455-STX817A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STX817A

Manufacturer:: STMicroelectronics

Ventron No:: 2472455-STX817A

Description:: TRANS PNP 80V 1.5A TO-92

ECAD Model:

Datasheet:: STX817A

Specifications

STMicroelectronics STX817A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STX817A.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STX817
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
140
Height
4.95mm
Length
4.95mm
Width
3.94mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

STX817A More Descriptions

Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP 120 Volt 1.5A
TRANSISTOR, PNP TO-92; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:0.25V; Power Dissipation:0.9W; Min Hfe:25; ft, Typ:50MHz; Case ;RoHS Compliant: Yes
TRANSISTOR, PNP TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1A; DC Current Gain hFE: 140hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 250mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1A; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 25; Power Dissipation Ptot Max: 900mW; Termination Type: Through Hole; Voltage Vcbo: 80V

Certification