STMicroelectronics STS5DNF20V

Name: STS5DNF20V
Brand: STMicroelectronics
SKU: 3554095-STS5DNF20V
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS5DNF20V

Manufacturer:: STMicroelectronics

Ventron No:: 3554095-STS5DNF20V

Description:: MOSFET 2N-CH 20V 5A 8-SOIC

ECAD Model:

Datasheet:: STS5DNF20V

Specifications

STMicroelectronics STS5DNF20V technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS5DNF20V.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
40mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS5D
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
7 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
11.5nC @ 4.5V
Rise Time
33ns
Fall Time (Typ)
10 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
2.7V
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.65mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS5DNF20V   Description
  This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF20V   Features
? Ultra low threshold gate drive (2.7 V) ? Standard outline for easy automated surface mount assembly
STS5DNF20V   Applications
? Switching application

STS5DNF20V More Descriptions

N-channel 20 V, 0.030 Ohm typ., 5 A STripFET(TM) II Power MOSFET in a SO-8 package
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size(TM)" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
MOSFET, NN CH, 20V, 5A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Continuous Drain Current Id, N Channel: 5A; Current Id Max: 5A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.03ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 4.5V

Certification