STMicroelectronics STS2DNF30L
- Part Number:
- STS2DNF30L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3069625-STS2DNF30L
- Description:
- MOSFET 2N-CH 30V 3A 8SOIC
- Datasheet:
- STS2DNF30L
STMicroelectronics STS2DNF30L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS2DNF30L.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™
- JESD-609 Codee4
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTS2D
- Pin Count8
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time19 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds121pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
- Rise Time20ns
- Fall Time (Typ)8 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)3A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)18V
- Drain Current-Max (Abs) (ID)3A
- Drain-source On Resistance-Max0.15Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)9A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height6.35mm
- Length50.8mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The STMicroelectronics STS2DNF30L is a MOSFET N-Channel Array designed for high-performance applications. This device features a 30V drain-source voltage rating and a 3A drain current rating. It is designed to provide superior switching performance and low on-resistance. The STS2DNF30L is ideal for use in power management, motor control, and other high-current applications. It is also RoHS compliant and has a low thermal resistance for improved heat dissipation. The STS2DNF30L is a reliable and cost-effective solution for a variety of applications.
STS2DNF30L More Descriptions
N-Channel 30V - 0.09 Ohm - 3A - SO-8 STripFET(TM) II POWER MOSFET
Dual N-Channel 30 V 110 mOhm SMT StripFET Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 3A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 3A 8-Pin SO N T/R / MOSFET 2N-CH 30V 3A 8SOIC
Mosfet, Dual N-Ch, 30V, 3A, Soic-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V Rohs Compliant: Yes |Stmicroelectronics STS2DNF30L
MOSFET, NN CH, 30V, 3A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Continuous Drain Current Id, N Channel: 3A; Current Id Max: 3A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.09ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 18V; Voltage Vgs Rds on Measurement: 10V
Dual N-Channel 30 V 110 mOhm SMT StripFET Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 3A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 3A 8-Pin SO N T/R / MOSFET 2N-CH 30V 3A 8SOIC
Mosfet, Dual N-Ch, 30V, 3A, Soic-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V Rohs Compliant: Yes |Stmicroelectronics STS2DNF30L
MOSFET, NN CH, 30V, 3A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Continuous Drain Current Id, N Channel: 3A; Current Id Max: 3A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.09ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 18V; Voltage Vgs Rds on Measurement: 10V
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