STS2DNF30L

STMicroelectronics STS2DNF30L

Part Number:
STS2DNF30L
Manufacturer:
STMicroelectronics
Ventron No:
3069625-STS2DNF30L
Description:
MOSFET 2N-CH 30V 3A 8SOIC
ECAD Model:
Datasheet:
STS2DNF30L

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Specifications
STMicroelectronics STS2DNF30L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS2DNF30L.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™
  • JESD-609 Code
    e4
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STS2D
  • Pin Count
    8
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    19 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    121pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    4.5nC @ 10V
  • Rise Time
    20ns
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    3A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    18V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain-source On Resistance-Max
    0.15Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    9A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    6.35mm
  • Length
    50.8mm
  • Width
    6.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The STMicroelectronics STS2DNF30L is a MOSFET N-Channel Array designed for high-performance applications. This device features a 30V drain-source voltage rating and a 3A drain current rating. It is designed to provide superior switching performance and low on-resistance. The STS2DNF30L is ideal for use in power management, motor control, and other high-current applications. It is also RoHS compliant and has a low thermal resistance for improved heat dissipation. The STS2DNF30L is a reliable and cost-effective solution for a variety of applications.
STS2DNF30L More Descriptions
N-Channel 30V - 0.09 Ohm - 3A - SO-8 STripFET(TM) II POWER MOSFET
Dual N-Channel 30 V 110 mOhm SMT StripFET Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 3A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 3A 8-Pin SO N T/R / MOSFET 2N-CH 30V 3A 8SOIC
Mosfet, Dual N-Ch, 30V, 3A, Soic-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V Rohs Compliant: Yes |Stmicroelectronics STS2DNF30L
MOSFET, NN CH, 30V, 3A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Continuous Drain Current Id, N Channel: 3A; Current Id Max: 3A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.09ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 18V; Voltage Vgs Rds on Measurement: 10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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