STMicroelectronics STP18N55M5

STP18N55M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1260pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 550V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 550V.As a result of its turn-off delay time, which is 29 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

STP18N55M5 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 52A.
a threshold voltage of 4V


STP18N55M5 Applications
There are a lot of STMicroelectronics
STP18N55M5 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.