STMicroelectronics STP12NK30Z
- Part Number:
- STP12NK30Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849985-STP12NK30Z
- Description:
- MOSFET N-CH 300V 9A TO-220
- Datasheet:
- STP12NK30Z
STMicroelectronics STP12NK30Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NK30Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance400mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC300V
- TechnologyMOSFET (Metal Oxide)
- Current Rating9A
- Base Part NumberSTP12
- Pin Count3
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)9A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage300V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP12NK30Z Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.In addition to reducing power consumption, this device uses drive voltage (10V).
STP12NK30Z Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 36 ns
a threshold voltage of 3.75V
STP12NK30Z Applications
There are a lot of STMicroelectronics
STP12NK30Z applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.In addition to reducing power consumption, this device uses drive voltage (10V).
STP12NK30Z Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 36 ns
a threshold voltage of 3.75V
STP12NK30Z Applications
There are a lot of STMicroelectronics
STP12NK30Z applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STP12NK30Z More Descriptions
N-Channel 300 V 0.4 Ohm Flange Mount SuperMESHPower MosFet - TO-220
N-CHANNEL 300V 0.36 OHM 9A TO-220 ZENER-PROTECTED SUPER-MESH POWER MOSFET
Trans MOSFET N-CH 300V 9A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:90W Rohs Compliant: Yes |Stmicroelectronics STP12NK30Z
Power Field-Effect Transistor, 9A I(D), 300V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL 300V 0.36 OHM 9A TO-220 ZENER-PROTECTED SUPER-MESH POWER MOSFET
Trans MOSFET N-CH 300V 9A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:90W Rohs Compliant: Yes |Stmicroelectronics STP12NK30Z
Power Field-Effect Transistor, 9A I(D), 300V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 December 2023
LT4320 Ideal Diode Bridge Controllers Subverts the Traditional Bridge Rectifier
Ⅰ. What is LT4320?Ⅱ. How does LT4320 overcome the shortcomings of full-wave rectification?Ⅲ. Which manufacturer makes the LT4320?Ⅳ. Pin configuration of LT4320Ⅴ. Three-phase ideal rectification based on LT4320Ⅵ.... -
18 December 2023
Can CR2032 Button Battery Be Recharged?
Ⅰ. What is CR2032 battery?Ⅱ. Development of CR2032 lithium button batteryⅢ. Five major brands of CR2032 button batteriesⅣ. Applications and application circuit of CR2032 button batteryⅤ. Is the... -
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of... -
19 December 2023
PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC
Ⅰ. What is PT2399?Ⅱ. Structure and working principle of PT2399Ⅲ. Total harmonic distortion and noise of PT2399Ⅳ. Which one is better, PT2399 or PT2399?Ⅴ. Who is the manufacturer...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.