STP12NK30Z

STMicroelectronics STP12NK30Z

Part Number:
STP12NK30Z
Manufacturer:
STMicroelectronics
Ventron No:
2849985-STP12NK30Z
Description:
MOSFET N-CH 300V 9A TO-220
ECAD Model:
Datasheet:
STP12NK30Z

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Specifications
STMicroelectronics STP12NK30Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NK30Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    400mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    300V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    9A
  • Base Part Number
    STP12
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    90W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    90W
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    400m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    670pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    9A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    300V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP12NK30Z Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.In addition to reducing power consumption, this device uses drive voltage (10V).

STP12NK30Z Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 36 ns
a threshold voltage of 3.75V


STP12NK30Z Applications
There are a lot of STMicroelectronics
STP12NK30Z applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STP12NK30Z More Descriptions
N-Channel 300 V 0.4 Ohm Flange Mount SuperMESH™Power MosFet - TO-220
N-CHANNEL 300V 0.36 OHM 9A TO-220 ZENER-PROTECTED SUPER-MESH POWER MOSFET
Trans MOSFET N-CH 300V 9A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:90W Rohs Compliant: Yes |Stmicroelectronics STP12NK30Z
Power Field-Effect Transistor, 9A I(D), 300V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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