ST STP11NM60FDFP
- Part Number:
- STP11NM60FDFP
- Manufacturer:
- ST
- Ventron No:
- 5460895-STP11NM60FDFP
- Description:
- ORIGINAL IN STOCK
- Datasheet:
- STP11NM60FDFP
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STP11NM60FDFP More Descriptions
N-Channel 600V - 0.4Ohm - 11A FDmesh(TM) POWER MOSFET (with FAST DIODE)
N-Channel 600 V 0.45 Ohm MDmesh Power MosFet - TO-220FP
Mosfet Transistor, N Channel, 11 A, 600 V, 450 Mohm, 10 V, 4 V |Stmicroelectronics STP11NM60FDFP
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 350mJ; Capacitance Ciss Typ: 900pF; Current Iar: 5.5A; Current Id Max: 11A; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -65°C; Junction to Case Thermal Resistance A: 3.57°C/W; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V
N-Channel 600 V 0.45 Ohm MDmesh Power MosFet - TO-220FP
Mosfet Transistor, N Channel, 11 A, 600 V, 450 Mohm, 10 V, 4 V |Stmicroelectronics STP11NM60FDFP
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 350mJ; Capacitance Ciss Typ: 900pF; Current Iar: 5.5A; Current Id Max: 11A; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -65°C; Junction to Case Thermal Resistance A: 3.57°C/W; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V
The three parts on the right have similar specifications to STP11NM60FDFP.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeNumber of PinsResistanceElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTurn On Delay TimeView Compare
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STP11NM60FDFP-------------------------------------------------------------------
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Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeSTripFET™e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDnot_compliantNOT SPECIFIEDSTP1303R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.4m Ω @ 45A, 10V1V @ 250μA4450pF @ 15V90A Tc93nC @ 10V24V5V 10V±20V90ATO-220AB0.0044Ohm360A24V900 mJROHS3 Compliant-------------------
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Through HoleThrough HoleTO-220-3SILICON150°C TJTubeMDmesh™ Ve3-Active1 (Unlimited)3EAR99Matte Tin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)----STP18N3--1-110W TcENHANCEMENT MODE-N-ChannelSWITCHING192m Ω @ 8A, 10V5V @ 250μA1260pF @ 100V16A Tc31nC @ 10V-10V±25V13ATO-220AB-52A-200 mJROHS3 CompliantACTIVE (Last Updated: 8 months ago)17 Weeks3240MOhmSingle90W9.5ns13 ns29 ns4V25V550V15.75mm10.4mm4.6mmNo SVHCNoLead Free-
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Through HoleThrough HoleTO-220-3--55°C~175°C TJTubeSTripFET™ IIe3-Active1 (Unlimited)-EAR99Matte Tin (Sn) - annealed-FET General Purpose PowerMOSFET (Metal Oxide)----STP150---1Single300W Tc--N-Channel-7m Ω @ 40A, 10V4V @ 250μA3650pF @ 25V80A Tc150nC @ 10V40V10V±20V80A-----ROHS3 CompliantACTIVE (Last Updated: 8 months ago)12 Weeks---300W150ns45 ns70 ns-20V-----No-15 ns
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