STMicroelectronics STP130NH02L
- Part Number:
- STP130NH02L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488176-STP130NH02L
- Description:
- MOSFET N-CH 24V 90A TO-220AB
- Datasheet:
- STP130NH02L
STMicroelectronics STP130NH02L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP130NH02L.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP130
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.4m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4450pF @ 15V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Drain to Source Voltage (Vdss)24V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)90A
- JEDEC-95 CodeTO-220AB
- Drain-source On Resistance-Max0.0044Ohm
- Pulsed Drain Current-Max (IDM)360A
- DS Breakdown Voltage-Min24V
- Avalanche Energy Rating (Eas)900 mJ
- RoHS StatusROHS3 Compliant
STP130NH02L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4450pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.Peak drain current for this device is 360A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 24V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 24V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STP130NH02L Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 24V drain to source voltage (Vdss)
STP130NH02L Applications
There are a lot of STMicroelectronics
STP130NH02L applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4450pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.Peak drain current for this device is 360A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 24V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 24V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STP130NH02L Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 24V drain to source voltage (Vdss)
STP130NH02L Applications
There are a lot of STMicroelectronics
STP130NH02L applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STP130NH02L More Descriptions
Trans MOSFET N-CH 24V 90A 3-Pin (3 Tab) TO-220 T/R
N-CHANNEL 24V - 0.0034 Y - 90A D²PAK/TO-220
Power Field-Effect Transistor, 90A I(D), 24V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL 24V - 0.0034 Y - 90A D²PAK/TO-220
Power Field-Effect Transistor, 90A I(D), 24V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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