STP130NH02L

STMicroelectronics STP130NH02L

Part Number:
STP130NH02L
Manufacturer:
STMicroelectronics
Ventron No:
2488176-STP130NH02L
Description:
MOSFET N-CH 24V 90A TO-220AB
ECAD Model:
Datasheet:
STP130NH02L

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Specifications
STMicroelectronics STP130NH02L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP130NH02L.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP130
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.4m Ω @ 45A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4450pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    90A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • Drain to Source Voltage (Vdss)
    24V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    90A
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.0044Ohm
  • Pulsed Drain Current-Max (IDM)
    360A
  • DS Breakdown Voltage-Min
    24V
  • Avalanche Energy Rating (Eas)
    900 mJ
  • RoHS Status
    ROHS3 Compliant
Description
STP130NH02L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4450pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.Peak drain current for this device is 360A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 24V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 24V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

STP130NH02L Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 24V drain to source voltage (Vdss)


STP130NH02L Applications
There are a lot of STMicroelectronics
STP130NH02L applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STP130NH02L More Descriptions
Trans MOSFET N-CH 24V 90A 3-Pin (3 Tab) TO-220 T/R
N-CHANNEL 24V - 0.0034 Y - 90A D²PAK/TO-220
Power Field-Effect Transistor, 90A I(D), 24V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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