STMicroelectronics STP11NK50ZFP

Name: STP11NK50ZFP
Brand: STMicroelectronics
SKU: 2482933-STP11NK50ZFP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP11NK50ZFP

Manufacturer:: STMicroelectronics

Ventron No:: 2482933-STP11NK50ZFP

Description:: MOSFET N-CH 500V 10A TO-220FP

ECAD Model:

Datasheet:: STP11NK50ZFP

Specifications

STMicroelectronics STP11NK50ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP11NK50ZFP.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
TO-220FP-7012510
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
520MOhm
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP11N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
14.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
40A
Max Junction Temperature (Tj)
150°C
Height
20mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP11NK50ZFP Description
STP11NK50ZFP is a type of Zener-protected SuperMESHTM power MOSFET provided by STMicroelectronics based on the well-established strip-based PowerMESH? layout. It is able to minimize on-state resistance while ensuring a very good dv/dt capability for the most demanding applications.

STP11NK50ZFP Features
Extremely high dv/dt capability
100% avalanche tested
Low gate charge
Low intrinsic capacitances
Available in the TO-220 package

STP11NK50ZFP Applications
Switching applications

STP11NK50ZFP More Descriptions

Trans MOSFET N-CH 500V 10A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 500V 10A TO-220FP
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
N-Channel 500 V 520 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W
500V 10A 520m´Î@10V4.5A 30W 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Mosfet, N, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:30W Rohs Compliant: Yes |Stmicroelectronics STP11NK50ZFP
Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP11NK50ZFP.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Factory Lead Time

View Compare
STP11NK50ZFP

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

TO-220FP-7012510

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

520MOhm

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STP11N

3

1

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

14.5 ns

N-Channel

SWITCHING

520m Ω @ 4.5A, 10V

4.5V @ 100μA

1390pF @ 25V

10A Tc

68nC @ 10V

18ns

10V

±30V

15 ns

41 ns

10A

3.75V

TO-220AB

30V

500V

40A

150°C

20mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP130NH02L

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-

-55°C~175°C TJ

Tube

STripFET™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

LOW THRESHOLD

FET General Purpose Power

MOSFET (Metal Oxide)

STP130

3

1

-

150W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

4.4m Ω @ 45A, 10V

1V @ 250μA

4450pF @ 15V

90A Tc

93nC @ 10V

-

5V 10V

±20V

-

-

90A

-

TO-220AB

-

-

360A

-

-

-

-

-

-

ROHS3 Compliant

-

yes

Matte Tin (Sn)

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

24V

0.0044Ohm

24V

900 mJ

-

STP11NK50ZFP vs STP130NH02L
STP18N55M5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-

150°C TJ

Tube

MDmesh™ V

e3

Active

1 (Unlimited)

3

EAR99

240MOhm

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

STP18N

3

1

-

110W Tc

Single

ENHANCEMENT MODE

90W

-

-

N-Channel

SWITCHING

192m Ω @ 8A, 10V

5V @ 250μA

1260pF @ 100V

16A Tc

31nC @ 10V

9.5ns

10V

±25V

13 ns

29 ns

13A

4V

TO-220AB

25V

550V

52A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Matte Tin (Sn)

-

-

-

-

-

-

-

-

-

-

200 mJ

17 Weeks

STP11NK50ZFP vs STP18N55M5
STP150NF04

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP150

-

1

-

300W Tc

-

-

300W

-

15 ns

N-Channel

-

7m Ω @ 40A, 10V

4V @ 250μA

3650pF @ 25V

80A Tc

150nC @ 10V

150ns

10V

±20V

45 ns

70 ns

80A

-

-

20V

-

-

-

-

-

-

-

No

ROHS3 Compliant

-

-

Matte Tin (Sn) - annealed

-

-

-

-

-

-

Single

40V

-

-

-

12 Weeks

STP11NK50ZFP vs STP150NF04