STMicroelectronics STBV32-AP
- Part Number:
- STBV32-AP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585135-STBV32-AP
- Description:
- TRANS NPN 400V 1.5A TO-92
- ECAD Model:
-
- Datasheet:
- STBV32-AP
STMicroelectronics STBV32-AP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STBV32-AP.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation1.5W
- Terminal PositionBOTTOM
- Base Part NumberSTBV32
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.5W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1.5V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 1A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 1.5A
- Collector Emitter Breakdown Voltage400V
- Max Breakdown Voltage400V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STBV32-AP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 1.5A.The breakdown input voltage is 400V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
STBV32-AP Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
STBV32-AP Applications
There are a lot of STMicroelectronics
STBV32-AP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 1.5A.The breakdown input voltage is 400V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
STBV32-AP Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
STBV32-AP Applications
There are a lot of STMicroelectronics
STBV32-AP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STBV32-AP More Descriptions
RF Bipolar Transistors HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Trans GP BJT NPN 400V 1.5A 3-Pin TO-92 Ammo
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 1.5A 3-Pin TO-92 Ammo
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
The three parts on the right have similar specifications to STBV32-AP.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionBase Part NumberPin CountNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningRoHS StatusPbfree CodeElement ConfigurationEmitter Base Voltage (VEBO)Terminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatushFE MinLead FreeView Compare
-
STBV32-APNRND (Last Updated: 7 months ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON150°C TJTape & Box (TB)e3Not For New Designs1 (Unlimited)3EAR99Matte Tin (Sn)8541.29.00.95Other Transistors1.5WBOTTOMSTBV3231SINGLE1.5WSWITCHINGNPNNPN1.5V1.5A5 @ 1A 2V1mA1.5V @ 500mA, 1.5A400V400VNoROHS3 Compliant------------ -
-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON150°C TJTape & Box (TB)e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors1WBOTTOMSTBV4231-1WSWITCHINGNPNNPN400V1A10 @ 400mA 5V1mA1.5V @ 250mA, 750mA400V400VNoROHS3 CompliantyesSingle9V--------
-
-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)-SILICON150°C TJBulke3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--1WBOTTOMSTBV4231-1WSWITCHINGNPNNPN1.5V1A10 @ 400mA 5V1mA1.5V @ 250mA, 750mA400V--ROHS3 Compliant-Single-WIRENOT SPECIFIEDunknownNOT SPECIFIEDO-PBCY-W3Not Qualified5Lead Free
-
-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)-SILICON150°C TJBulke3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-Other Transistors1WBOTTOMSTBV4231-1WSWITCHINGNPNNPN1.5V1A10 @ 400mA 5V1mA1.5V @ 250mA, 750mA400V--ROHS3 Compliant-Single9V-NOT SPECIFIED-NOT SPECIFIEDO-PBCY-T3Not Qualified-Lead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361... -
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ.... -
22 November 2023
An Overview of 74HC373 Octal Transparent D Type Latch
Ⅰ. Overview of 74HC373Ⅱ. Manufacturer of 74HC373Ⅲ. Pin configuration and functions of 74HC373Ⅳ. What are the features of 74HC373?Ⅴ. Technical parameters of 74HC373Ⅵ. What are the applications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.