ST2310DHI

STMicroelectronics ST2310DHI

Part Number:
ST2310DHI
Manufacturer:
STMicroelectronics
Ventron No:
3585577-ST2310DHI
Description:
TRANS NPN 600V 12A ISOWATT218FX
ECAD Model:
Datasheet:
ST2310DHI

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Specifications
STMicroelectronics ST2310DHI technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics ST2310DHI.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOWATT-218-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    55W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    12A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    ST2310
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    55W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    3V
  • Max Collector Current
    12A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5.5 @ 7A 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 1.75A, 7A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Base Voltage (VCBO)
    1.5kV
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    5.5
  • Continuous Collector Current
    12A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ST2310DHI Overview
In this device, the DC current gain is 5.5 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1.75A, 7A.Maintaining the continuous collector voltage at 12A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).Maximum collector currents can be below 12A volts.

ST2310DHI Features
the DC current gain for this device is 5.5 @ 7A 5V
the vce saturation(Max) is 3V @ 1.75A, 7A
the emitter base voltage is kept at 7V
the current rating of this device is 12A


ST2310DHI Applications
There are a lot of STMicroelectronics
ST2310DHI applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ST2310DHI More Descriptions
Power Bipolar Transistor, 12A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Power Bipolar Transistors NPN Hi-Volt Fast Sw
TRANS NPN 600V 12A ISOWATT218FX
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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