ST13007

STMicroelectronics ST13007

Part Number:
ST13007
Manufacturer:
STMicroelectronics
Ventron No:
3585281-ST13007
Description:
TRANS NPN 400V 8A TO220
ECAD Model:
Datasheet:
ST13007

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Specifications
STMicroelectronics ST13007 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics ST13007.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    400V
  • Max Power Dissipation
    80W
  • Current Rating
    8A
  • Base Part Number
    ST13007
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    80W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5A 5V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 2A, 8A
  • Collector Emitter Breakdown Voltage
    400V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    400V
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    16
  • VCEsat-Max
    3 V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ST13007 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 4MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.

ST13007 Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz


ST13007 Applications
There are a lot of STMicroelectronics
ST13007 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ST13007 More Descriptions
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3 Tab) TO-220AB Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
400V 80W 8A 3V@8A2A NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 400V 8AThrough Hole
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Power Bipolar, NPN, 5V, 1000mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, 400V, 8A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Ca
Transistor, Npn, 400V, 8A, To-220Ab; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics ST13007
Product Comparison
The three parts on the right have similar specifications to ST13007.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Emitter Base Voltage (VEBO)
    hFE Min
    VCEsat-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Collector Base Voltage (VCBO)
    Height
    Length
    Width
    REACH SVHC
    Terminal Position
    Configuration
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Case Connection
    View Compare
  • ST13007
    ST13007
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    80W
    8A
    ST13007
    3
    1
    Single
    80W
    SWITCHING
    NPN
    NPN
    400V
    8A
    5 @ 5A 5V
    10μA
    TO-220AB
    3V @ 2A, 8A
    400V
    4MHz
    1V
    400V
    9V
    16
    3 V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ST13005
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    75W
    4A
    ST13005
    3
    1
    Single
    75W
    SWITCHING
    NPN
    NPN
    400V
    4A
    8 @ 2A 5V
    1mA
    TO-220AB
    1V @ 1A, 4A
    400V
    4MHz
    1V
    -
    9V
    15
    1 V
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    700V
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
  • ST13007D
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    80W
    -
    ST13007
    3
    1
    -
    80W
    SWITCHING
    NPN
    NPN
    400V
    8A
    8 @ 5A 5V
    100μA
    TO-220AB
    2V @ 2A, 8A
    400V
    -
    -
    -
    9V
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    700V
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
    -
    -
  • ST13007DFP
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    36W
    -
    ST13007
    3
    1
    -
    36W
    SWITCHING
    NPN
    NPN
    2V
    8A
    8 @ 5A 5V
    100μA
    TO-220AB
    2V @ 2A, 8A
    400V
    -
    -
    -
    9V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn) - annealed
    700V
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    ISOLATED
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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