STMicroelectronics ST13007
- Part Number:
- ST13007
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585281-ST13007
- Description:
- TRANS NPN 400V 8A TO220
- Datasheet:
- ST13007
STMicroelectronics ST13007 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics ST13007.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation80W
- Current Rating8A
- Base Part NumberST13007
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A 5V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
- Collector Emitter Breakdown Voltage400V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage400V
- Emitter Base Voltage (VEBO)9V
- hFE Min16
- VCEsat-Max3 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ST13007 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 4MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
ST13007 Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz
ST13007 Applications
There are a lot of STMicroelectronics
ST13007 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 4MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
ST13007 Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz
ST13007 Applications
There are a lot of STMicroelectronics
ST13007 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ST13007 More Descriptions
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3 Tab) TO-220AB Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
400V 80W 8A 3V@8A2A NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 400V 8AThrough Hole
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Power Bipolar, NPN, 5V, 1000mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, 400V, 8A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Ca
Transistor, Npn, 400V, 8A, To-220Ab; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics ST13007
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
400V 80W 8A 3V@8A2A NPN 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN, TO-220AB 400V 8AThrough Hole
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Power Bipolar, NPN, 5V, 1000mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, 400V, 8A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Ca
Transistor, Npn, 400V, 8A, To-220Ab; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics ST13007
The three parts on the right have similar specifications to ST13007.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinVCEsat-MaxRadiation HardeningRoHS StatusLead FreeTerminal FinishCollector Base Voltage (VCBO)HeightLengthWidthREACH SVHCTerminal PositionConfigurationPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionView Compare
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ST13007ACTIVE (Last Updated: 8 months ago)8 WeeksTinThrough HoleThrough HoleTO-220-33SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors400V80W8AST1300731Single80WSWITCHINGNPNNPN400V8A5 @ 5A 5V10μATO-220AB3V @ 2A, 8A400V4MHz1V400V9V163 VNoROHS3 CompliantLead Free--------------
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ACTIVE (Last Updated: 7 months ago)8 Weeks-Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors400V75W4AST1300531Single75WSWITCHINGNPNNPN400V4A8 @ 2A 5V1mATO-220AB1V @ 1A, 4A400V4MHz1V-9V151 VNoROHS3 CompliantLead FreeMatte Tin (Sn)700V9.15mm10.4mm4.6mmNo SVHC-------
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ACTIVE (Last Updated: 7 months ago)8 Weeks-Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors-80W-ST1300731-80WSWITCHINGNPNNPN400V8A8 @ 5A 5V100μATO-220AB2V @ 2A, 8A400V---9V--NoROHS3 CompliantLead FreeMatte Tin (Sn)700V----SINGLESINGLE WITH BUILT-IN DIODE-----
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ACTIVE (Last Updated: 8 months ago)8 Weeks-Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors-36W-ST1300731-36WSWITCHINGNPNNPN2V8A8 @ 5A 5V100μATO-220AB2V @ 2A, 8A400V---9V---ROHS3 CompliantLead FreeMatte Tin (Sn) - annealed700V----SINGLESINGLE WITH BUILT-IN DIODENOT SPECIFIEDnot_compliantNOT SPECIFIEDNot QualifiedISOLATED
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