Toshiba Semiconductor and Storage SSM6N35FE,LM

Name: SSM6N35FE,LM
Brand: Toshiba Semiconductor and Storage
SKU: 3069645-SSM6N35FE,LM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SSM6N35FE,LM

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 3069645-SSM6N35FE,LM

Description:: MOSFET 2N-CH 20V 0.18A ES6

ECAD Model:

Datasheet:: Mosfets Prod Guide

Specifications

Toshiba Semiconductor and Storage SSM6N35FE,LM technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage SSM6N35FE,LM.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Reach Compliance Code
unknown
Base Part Number
SSM6N35
Power - Max
150mW
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
3 Ω @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 3V
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
180mA
FET Feature
Logic Level Gate
RoHS Status
RoHS Compliant

Description

SSM6N35FE,LM Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SSM6N35FE,LM or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SSM6N35FE,LM. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SSM6N35FE,LM More Descriptions

Trans MOSFET N-CH Si 20V 0.18A 6-Pin ES T/R
MOSFET 2N-CH 20V 0.18A ES6
ES6 S-MOS(HC),ACTIVE
MOSFET SMALL SIGNAL

Product Comparison

The three parts on the right have similar specifications to SSM6N35FE,LM.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Power Dissipation

Reach Compliance Code

Base Part Number

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

FET Feature

RoHS Status

Number of Channels

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Number of Pins

Subcategory

Element Configuration

Operating Mode

Turn On Delay Time

Polarity/Channel Type

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

FET Technology

View Compare
SSM6N35FE,LM

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

150°C TJ

Tape & Reel (TR)

2009

Active

1 (Unlimited)

150mW

unknown

SSM6N35

150mW

2 N-Channel (Dual)

3 Ω @ 50mA, 4V

1V @ 1mA

9.5pF @ 3V

20V

180mA

Logic Level Gate

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SSM6N7002BFE,LM

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

150°C TJ

Cut Tape (CT)

2009

Active

1 (Unlimited)

150mW

-

-

-

2 N-Channel (Dual)

2.1 Ω @ 500mA, 10V

3.1V @ 250μA

17pF @ 25V

60V

200mA

Logic Level Gate

RoHS Compliant

2

10V

60V

550μm

1.6mm

1.2mm

-

-

-

-

-

-

-

-

-

SSM6N35FE,LM vs SSM6N7002BFE,LM
SSM6L11TU(TE85L,F)

Toshiba Semiconductor and Storage

-

Surface Mount

Surface Mount

6-SMD, Flat Leads

150°C TJ

Cut Tape (CT)

2014

Obsolete

1 (Unlimited)

500mW

unknown

-

-

N and P-Channel

145m Ω @ 250MA, 4V

1.1V @ 100μA

268pF @ 10V

20V

500mA

Logic Level Gate

RoHS Compliant

2

-1.1V

-

-

-

-

6

Other Transistors

Dual

ENHANCEMENT MODE

16 ns

N-CHANNEL AND P-CHANNEL

15 ns

0.5A

METAL-OXIDE SEMICONDUCTOR

SSM6N35FE,LM vs SSM6L11TU(TE85L,F)
SSM6N15AFE,LM

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

150°C TJ

Tape & Reel (TR)

2014

Active

1 (Unlimited)

150mW

-

SSM6N15

150mW

2 N-Channel (Dual)

4 Ω @ 10mA, 4V

1.5V @ 100μA

7.8pF @ 3V

30V

100mA

Logic Level Gate

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SSM6N35FE,LM vs SSM6N15AFE,LM