Vishay Siliconix SQJ941EP-T1-GE3

Name: SQJ941EP-T1-GE3
Brand: Vishay Siliconix
SKU: 2848357-SQJ941EP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQJ941EP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848357-SQJ941EP-T1-GE3

Description:: MOSFET 2P-CH 30V 8A PPAK SO-8

ECAD Model:

Datasheet:: SQJ941EP-T1-GE3

Specifications

Vishay Siliconix SQJ941EP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQJ941EP-T1-GE3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Published
2011
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
55W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PSSO-G4
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
55W
Case Connection
DRAIN
Turn On Delay Time
49 ns
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
24m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Rise Time
35ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
-2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-2 V
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SQJ941EP-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SQJ941EP-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SQJ941EP-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SQJ941EP-T1-GE3 More Descriptions

Trans MOSFET P-CH 30V 8A 8-Pin PowerPAK SO T/R
DUAL P-CHANNEL 30-V (D-S) 175C MOSFET
DUAL -30V -8A 24mOhm PPSO-8L RoHSconf
MOSFET,PP CH,W DIODE,30V,8A,POPAK8L; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Power Dissipation Pd:55W

Product Comparison

The three parts on the right have similar specifications to SQJ941EP-T1-GE3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

FET Technology

FET Feature

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Factory Lead Time

Reach Compliance Code

Configuration

Power - Max

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Supplier Device Package

Current - Continuous Drain (Id) @ 25°C

View Compare
SQJ941EP-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

8

506.605978mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2011

yes

Obsolete

1 (Unlimited)

4

EAR99

Other Transistors

55W

SINGLE

GULL WING

260

40

8

R-PSSO-G4

2

2

Dual

ENHANCEMENT MODE

55W

DRAIN

49 ns

2 P-Channel (Dual)

24m Ω @ 9A, 10V

2.5V @ 250μA

1800pF @ 10V

55nC @ 10V

35ns

30V

26 ns

47 ns

8A

-2V

20V

8A

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-2 V

Unknown

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
SQJ912AEP-T1_GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8 Dual

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

-

Active

1 (Unlimited)

4

EAR99

-

48W

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G4

2

-

-

ENHANCEMENT MODE

-

DRAIN

-

2 N-Channel (Dual)

9.3m Ω @ 9.7A, 10V

2.5V @ 250μA

1835pF @ 20V

38nC @ 10V

-

40V

-

-

30A

-

-

-

40V

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

ROHS3 Compliant

12 Weeks

unknown

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

48W

0.0093Ohm

120A

34 mJ

-

-

SQJ941EP-T1-GE3 vs SQJ912AEP-T1_GE3
SQJ974EP-T1_GE3

Vishay Siliconix

-

Surface Mount

PowerPAK® SO-8 Dual

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2 N-Channel (Dual)

25.5mOhm @ 10A, 10V

2.5V @ 250μA

1050pF @ 25V

30nC @ 10V

-

100V

-

-

-

-

-

-

-

-

Standard

-

-

-

ROHS3 Compliant

12 Weeks

-

-

48W

-

-

-

PowerPAK® SO-8 Dual

30A Tc

SQJ941EP-T1-GE3 vs SQJ974EP-T1_GE3
SQJ990EP-T1_GE3

Vishay Siliconix

-

Surface Mount

PowerPAK® SO-8 Dual

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2 N-Channel (Dual)

40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V

2.5V @ 250μA

1390pF @ 25V 650pF @ 25V

30nC @ 10V, 15nC @ 10V

-

100V

-

-

-

-

-

-

-

-

Standard

-

-

-

ROHS3 Compliant

12 Weeks

-

-

48W

-

-

-

PowerPAK® SO-8 Dual Asymmetric

34A Tc

SQJ941EP-T1-GE3 vs SQJ990EP-T1_GE3