Vishay Siliconix SQ1912EH-T1_GE3

Name: SQ1912EH-T1_GE3
Brand: Vishay Siliconix
SKU: 2473889-SQ1912EH-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ1912EH-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2473889-SQ1912EH-T1_GE3

Description:: MOSFET ARRAY 2N-CH 20V SC70-6

ECAD Model:

Datasheet:: SQ1912EH-T1_GE3

Specifications

Vishay Siliconix SQ1912EH-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ1912EH-T1_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power - Max
1.5W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
280m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 10V
Current - Continuous Drain (Id) @ 25°C
800mA Tc
Gate Charge (Qg) (Max) @ Vgs
1.15nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drain Current-Max (Abs) (ID)
0.8A
Drain-source On Resistance-Max
0.28Ohm
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Feedback Cap-Max (Crss)
12 pF
RoHS Status
ROHS3 Compliant

Description

SQ1912EH-T1_GE3 Description
SQ1912EH-T1_GE3 is an Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

SQ1912EH-T1_GE3 Features
TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg tested Single pulse avalanche energy: 7.2 mJ Maximum power dissipation TC = 25 °C: 1.5W

SQ1912EH-T1_GE3 Applications
Communications equipment Broadband fixed line access Industrial Test & Measurement Enterprise systems Enterprise projectors

SQ1912EH-T1_GE3 More Descriptions

20V 800mA 1.5W 280m´Î@4.5V1.2A 1.5V@250Ã×A 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R
MOSFET Dual N-Channel Automotive 20V 0.8A 6-Pin TO-263 T/R
DUAL N-CHANNEL 20-V (D-S) 175C MOSFET
MOSFET 2 N-CH 20V 800MA SC70-6

Certification