Rohm Semiconductor SP8J3FU6TB
- Part Number:
- SP8J3FU6TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2474102-SP8J3FU6TB
- Description:
- MOSFET 2P-CH 30V 3.5A 8SOIC
- ECAD Model:
-
- Datasheet:
- SP8J3FU6TB
Rohm Semiconductor SP8J3FU6TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8J3FU6TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Max Power Dissipation2W
- Base Part Number*J3
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time10 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs90m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds490pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 5V
- Rise Time15ns
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL
- Fall Time (Typ)10 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)3.5A
- Threshold Voltage-2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SP8J3FU6TB Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8J3FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8J3FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8J3FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8J3FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8J3FU6TB More Descriptions
Trans MOSFET P-CH 30V 3.5A 8-Pin SOP T/R
MOSFET, DUAL, PP, 30V, 3.5A; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:-30V; On Resistance
MOSFET,DUAL, PP, 30V, 3.5A; Transistor type:Low Gate Drive; Voltage, Vds typ:-30V; Current, Id cont:3.5A; Resistance, Rds on:0.165R; Voltage, Vgs Rds on measurement:4V; Voltage, Vgs th typ:-2.5V; Case style:SOP-8; Current, Idm RoHS Compliant: Yes
MOSFET, DUAL, PP, 30V, 3.5A; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.165ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -3.5A; Drain Source Voltage Vds, P Channel: 30V; On Resistance Rds(on), P Channel: 0.065ohm; Pulse Current Idm: 14A; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: -2.5V; Voltage Vgs th Min: -1V
MOSFET, DUAL, PP, 30V, 3.5A; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:-30V; On Resistance
MOSFET,DUAL, PP, 30V, 3.5A; Transistor type:Low Gate Drive; Voltage, Vds typ:-30V; Current, Id cont:3.5A; Resistance, Rds on:0.165R; Voltage, Vgs Rds on measurement:4V; Voltage, Vgs th typ:-2.5V; Case style:SOP-8; Current, Idm RoHS Compliant: Yes
MOSFET, DUAL, PP, 30V, 3.5A; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.165ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -3.5A; Drain Source Voltage Vds, P Channel: 30V; On Resistance Rds(on), P Channel: 0.065ohm; Pulse Current Idm: 14A; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: -2.5V; Voltage Vgs th Min: -1V
The three parts on the right have similar specifications to SP8J3FU6TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureREACH SVHCRadiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Lead FreePower - MaxView Compare
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SP8J3FU6TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)EAR99FET General Purpose Power2W*J3ENHANCEMENT MODE2W10 ns2 P-Channel (Dual)90m Ω @ 3.5A, 10V2.5V @ 1mA490pF @ 10V5.5nC @ 5V15ns30VN-CHANNEL10 ns35 ns3.5A-2.5V20V30VMETAL-OXIDE SEMICONDUCTORLogic Level GateNo SVHCNoROHS3 Compliant-------------------- -
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)--Tape & Reel (TR)2008Last Time Buy1 (Unlimited)---*J66---2 P-Channel (Dual)-----30V---9A----Standard--ROHS3 Compliant-------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)EAR99Other Transistors2W*J4ENHANCEMENT MODE--2 P-Channel (Dual)235m Ω @ 2A, 10V2.5V @ 1mA190pF @ 10V2.4nC @ 5V10ns30V---2A---METAL-OXIDE SEMICONDUCTORLogic Level Gate--ROHS3 CompliantSILICONe28TIN COPPER-30VGULL WING260-2A108Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODESWITCHING2A0.235Ohm8ALead Free-
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-150°C TJTape & Reel (TR)-Last Time Buy1 (Unlimited)--2W*J65---2 P-Channel (Dual)29m Ω @ 7A, 10V2.5V @ 1mA1200pF @ 10V18nC @ 5V-30V---7A----Logic Level Gate--ROHS3 Compliant------------------2W
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