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SMUN5235DW1T1G

ON Semiconductor SMUN5235DW1T1G

Part Number:
SMUN5235DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
2844684-SMUN5235DW1T1G
Description:
TRANS 2NPN PREBIAS 0.187W SOT363
ECAD Model:
Datasheet:
SMUN5235DW1T1G

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Specifications
ON Semiconductor SMUN5235DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5235DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    187mW
  • Terminal Form
    GULL WING
  • Base Part Number
    MUN52**DW1T
  • Pin Count
    6
  • Reference Standard
    AEC-Q101
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    187mW
  • Direction
    Unidirectional
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    2.2k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Min Breakdown Voltage
    50V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor SMUN5235DW1T1G is a pre-biased, digital bipolar junction transistor (BJT) array designed for use in automotive applications. It features a NPN configuration with a maximum voltage rating of 50V and a maximum current rating of 100mA. This device is housed in a 6-pin SC-88 package and is designed to provide reliable performance in harsh automotive environments.

The SMUN5235DW1T1G is designed to provide high switching speeds and low power consumption. It is also designed to provide excellent thermal stability and high reliability. This device is ideal for use in automotive applications such as powertrain control, engine control, and lighting control.

The SMUN5235DW1T1G is designed to provide superior performance in a wide range of automotive applications. It is designed to provide high switching speeds and low power consumption, as well as excellent thermal stability and high reliability. This device is ideal for use in automotive applications such as powertrain control, engine control, and lighting control.
SMUN5235DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
MUN5235DW1 Series 50 V 100 mA Dual NPN Bias Resistor Transistor - SOT-363
80@5mA,10V 2 NPN - Pre-Biased 187mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Transistor, AEC-Q101, DUAL NPN, 50V, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous
Product Comparison
The three parts on the right have similar specifications to SMUN5235DW1T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Pin Count
    Reference Standard
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Direction
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Min Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Halogen Free
    Additional Feature
    Transistor Application
    Max Breakdown Voltage
    Max Output Current
    Operating Supply Voltage
    Max Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    View Compare
  • SMUN5235DW1T1G
    SMUN5235DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN52**DW1T
    6
    AEC-Q101
    2
    NPN
    Dual
    187mW
    Unidirectional
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    80
    2.2k Ω
    100mA
    47k Ω
    50V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SMUN5232DW1T1G
    SMUN5232DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BIP General Purpose Small Signal
    187mW
    -
    MUN52**DW1T
    6
    -
    2
    NPN
    Dual
    -
    -
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    15
    4.7k Ω
    -
    4.7k Ω
    -
    No
    ROHS3 Compliant
    Lead Free
    Halogen Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SMUN5235DW1T1G vs SMUN5232DW1T1G
  • SMUN5113DW1T1G
    SMUN5113DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN51**DW1T
    6
    AEC-Q101
    2
    PNP
    Dual
    -
    -
    2 PNP - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    80
    47k Ω
    -
    47k Ω
    -
    No
    ROHS3 Compliant
    Lead Free
    Halogen Free
    BUILT IN BIAS RESISTANCE RATIO IS 1
    SWITCHING
    50V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SMUN5235DW1T1G vs SMUN5113DW1T1G
  • SMUN5214DW1T1G
    SMUN5214DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN52**DW1T
    6
    AEC-Q101
    2
    NPN
    Dual
    -
    -
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    80
    10k Ω
    -
    47k Ω
    -
    No
    ROHS3 Compliant
    Lead Free
    Halogen Free
    BUILT IN BIAS RESISTANCE RATIO IS 4.7
    SWITCHING
    50V
    100mA
    50V
    10kHz
    250mV
    50V
    6V
    1mm
    2.2mm
    1.35mm
    SMUN5235DW1T1G vs SMUN5214DW1T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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