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SMUN5214DW1T1G

ON Semiconductor SMUN5214DW1T1G

Part Number:
SMUN5214DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
3068405-SMUN5214DW1T1G
Description:
TRANS 2NPN PREBIAS 0.187W SOT363
ECAD Model:
Datasheet:
SMUN5214DW1T1G

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Specifications
ON Semiconductor SMUN5214DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5214DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 4.7
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    187mW
  • Terminal Form
    GULL WING
  • Base Part Number
    MUN52**DW1T
  • Pin Count
    6
  • Reference Standard
    AEC-Q101
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Frequency
    10kHz
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    80
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SMUN5214DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5214DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5214DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SMUN5214DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
Dual NPN Bipolar Digital Transistor (BRT)
ON Semi SMUN5214DW1T1G Dual NPN Bipolar Transistor, 0.1 A, 50 V, 6-Pin SOT-363 | ON Semiconductor SMUN5214DW1T1G
2 NPN pre-biased (Dual) 250mW 100mA 50V SOT-363 Digital Transistors ROHS
Transistor, AEC-Q101, DUAL NPN, 50V, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous
Product Comparison
The three parts on the right have similar specifications to SMUN5214DW1T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Pin Count
    Reference Standard
    Max Output Current
    Operating Supply Voltage
    Number of Elements
    Polarity
    Element Configuration
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • SMUN5214DW1T1G
    SMUN5214DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTANCE RATIO IS 4.7
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN52**DW1T
    6
    AEC-Q101
    100mA
    50V
    2
    NPN
    Dual
    SWITCHING
    Halogen Free
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    10kHz
    250mV
    50V
    50V
    6V
    80
    10k Ω
    47k Ω
    1mm
    2.2mm
    1.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
  • SMUN5232DW1T1G
    SMUN5232DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    150°C
    -55°C
    -
    BIP General Purpose Small Signal
    187mW
    -
    MUN52**DW1T
    6
    -
    -
    -
    2
    NPN
    Dual
    -
    Halogen Free
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    -
    -
    -
    -
    15
    4.7k Ω
    4.7k Ω
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    SMUN5214DW1T1G vs SMUN5232DW1T1G
  • SMUN5115DW1T1G
    SMUN5115DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN51**DW1T
    6
    AEC-Q101
    -
    -
    2
    PNP
    Dual
    SWITCHING
    Halogen Free
    2 PNP - Pre-Biased (Dual)
    50V
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    10kHz
    250mV
    -
    50V
    6V
    160
    10k Ω
    -
    1mm
    2.2mm
    1.35mm
    No
    ROHS3 Compliant
    Lead Free
    SMUN5214DW1T1G vs SMUN5115DW1T1G
  • SMUN5113DW1T1G
    SMUN5113DW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTANCE RATIO IS 1
    BIP General Purpose Small Signal
    187mW
    GULL WING
    MUN51**DW1T
    6
    AEC-Q101
    -
    -
    2
    PNP
    Dual
    SWITCHING
    Halogen Free
    2 PNP - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    -
    -
    50V
    -
    -
    80
    47k Ω
    47k Ω
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    SMUN5214DW1T1G vs SMUN5113DW1T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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