ON Semiconductor SMUN5113DW1T1G
- Part Number:
- SMUN5113DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068423-SMUN5113DW1T1G
- Description:
- TRANS 2PNP PREBIAS 0.187W SOT363
- Datasheet:
- SMUN5113DW1T1G
ON Semiconductor SMUN5113DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5113DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation187mW
- Terminal FormGULL WING
- Base Part NumberMUN51**DW1T
- Pin Count6
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)47k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SMUN5113DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5113DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5113DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5113DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5113DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SMUN5113DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Dual PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Dual PNP Bipolar Digital Transistor (BRT)
The three parts on the right have similar specifications to SMUN5113DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormBase Part NumberPin CountReference StandardNumber of ElementsPolarityElement ConfigurationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMax FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthMax Output CurrentOperating Supply VoltageView Compare
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SMUN5113DW1T1GACTIVE (Last Updated: 5 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 1BIP General Purpose Small Signal187mWGULL WINGMUN51**DW1T6AEC-Q1012PNPDualSWITCHINGHalogen Free2 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V8047k Ω47k ΩNoROHS3 CompliantLead Free----------
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ACTIVE (Last Updated: 6 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)-EAR99Tin (Sn)150°C-55°C-BIP General Purpose Small Signal187mW-MUN52**DW1T6-2NPNDual-Halogen Free2 NPN - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-154.7k Ω4.7k ΩNoROHS3 CompliantLead Free---------
-
ACTIVE (Last Updated: 6 days ago)2 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal187mWGULL WINGMUN51**DW1T6AEC-Q1012PNPDualSWITCHINGHalogen Free2 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-16010k Ω-NoROHS3 CompliantLead Free10kHz250mV50V6V1mm2.2mm1.35mm--
-
ACTIVE (Last Updated: 6 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 4.7BIP General Purpose Small Signal187mWGULL WINGMUN52**DW1T6AEC-Q1012NPNDualSWITCHINGHalogen Free2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V8010k Ω47k ΩNoROHS3 CompliantLead Free10kHz250mV50V6V1mm2.2mm1.35mm100mA50V
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