ON Semiconductor SMUN5216DW1T1G
- Part Number:
- SMUN5216DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462063-SMUN5216DW1T1G
- Description:
- TRANS 2NPN PREBIAS 0.187W SOT363
- Datasheet:
- SMUN5216DW1T1G
ON Semiconductor SMUN5216DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5216DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation187mW
- Base Part NumberMUN52**DW1T
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Halogen FreeHalogen Free
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)4.7k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SMUN5216DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5216DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5216DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5216DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5216DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SMUN5216DW1T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
The three parts on the right have similar specifications to SMUN5216DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Radiation HardeningRoHS StatusLead FreeResistor - Emitter Base (R2)Number of TerminationsAdditional FeatureTerminal FormReference StandardTransistor ApplicationMax FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthMax Output CurrentOperating Supply VoltageMax Breakdown VoltageView Compare
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SMUN5216DW1T1GACTIVE (Last Updated: 6 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal187mWMUN52**DW1T62NPNDualHalogen Free2 NPN - Pre-Biased (Dual)250mV100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V1604.7k ΩNoROHS3 CompliantLead Free-----------------
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ACTIVE (Last Updated: 6 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal187mWMUN52**DW1T62NPNDualHalogen Free2 NPN - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V154.7k ΩNoROHS3 CompliantLead Free4.7k Ω---------------
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ACTIVE (Last Updated: 6 days ago)2 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal187mWMUN51**DW1T62PNPDualHalogen Free2 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 300μA, 10mA50V16010k ΩNoROHS3 CompliantLead Free-6BUILT IN BIAS RESISTORGULL WINGAEC-Q101SWITCHING10kHz250mV50V6V1mm2.2mm1.35mm---
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ACTIVE (Last Updated: 6 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal187mWMUN52**DW1T62NPNDualHalogen Free2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V8010k ΩNoROHS3 CompliantLead Free47k Ω6BUILT IN BIAS RESISTANCE RATIO IS 4.7GULL WINGAEC-Q101SWITCHING10kHz250mV50V6V1mm2.2mm1.35mm100mA50V50V
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