Vishay Siliconix SIZ340DT-T1-GE3
- Part Number:
- SIZ340DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473551-SIZ340DT-T1-GE3
- Description:
- MOSFET 2N-CH 30V 30A SOT-23
- ECAD Model:
-
- Datasheet:
- SIZ340DT-T1-GE3
Vishay Siliconix SIZ340DT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIZ340DT-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerPAIR®, TrenchFET®
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Max Power Dissipation31W
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Turn On Delay Time13 ns
- Power - Max16.7W 31W
- FET Type2 N-Channel (Half Bridge)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9.5m Ω @ 15.6A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A 40A
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time55ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage2.4V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0095Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)5 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Height750μm
- Length3mm
- Width3mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SIZ340DT-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SIZ340DT-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SIZ340DT-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SIZ340DT-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SIZ340DT-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SIZ340DT-T1-GE3 More Descriptions
Trans MOSFET Array Dual N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/RAvnet Japan
MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8
DUAL N-CHANNEL 30-V (D-S) MOSFET
30V 9.5mΩ@15.6A,10V 2 N-Channel(Half Bridge) Power-33-8 MOSFETs ROHS
MOSFET 30V .0095ohm@10V 30A Dual N-Ch T-FET
MOSFET 2N-CH 30V 30A PWRPAIR3X3
MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8
DUAL N-CHANNEL 30-V (D-S) MOSFET
30V 9.5mΩ@15.6A,10V 2 N-Channel(Half Bridge) Power-33-8 MOSFETs ROHS
MOSFET 30V .0095ohm@10V 30A Dual N-Ch T-FET
MOSFET 2N-CH 30V 30A PWRPAIR3X3
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