Vishay Siliconix SIA917DJ-T1-GE3
- Part Number:
- SIA917DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2847840-SIA917DJ-T1-GE3
- Description:
- MOSFET 2P-CH 20V 4.5A SC70-6
- ECAD Model:
-
- Datasheet:
- SIA917DJ-T1-GE3
Vishay Siliconix SIA917DJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIA917DJ-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SC-70-6 Dual
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance110mOhm
- SubcategoryOther Transistors
- Max Power Dissipation6.5W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSIA917
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4.5A
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Rise Time45ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)-4.5A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)3.3A
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)10A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs-1 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SIA917DJ-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SIA917DJ-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SIA917DJ-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SIA917DJ-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SIA917DJ-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SIA917DJ-T1-GE3 More Descriptions
Trans MOSFET P-CH 20V 3.3A 6-Pin PowerPAK SC-70 T/R
MOSFET 2P-CH 20V 4.5A SC70-6
DUAL P CHANNEL MOSFET, -20V, SC-70
OEMs, CMs ONLY (NO BROKERS)
MOSFET 2P-CH 20V 4.5A SC70-6
DUAL P CHANNEL MOSFET, -20V, SC-70
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SIA917DJ-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreePower DissipationFactory Lead TimeWeightJESD-609 CodeTerminal FinishHeightLengthWidthSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SIA917DJ-T1-GE3Surface MountSurface MountPowerPAK® SC-70-6 Dual6SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016yesObsolete1 (Unlimited)6EAR99110mOhmOther Transistors6.5W26040SIA91762DualENHANCEMENT MODEDRAIN20 ns2 P-Channel (Dual)SWITCHING110m Ω @ 2.5A, 4.5V1.5V @ 250μA250pF @ 10V4.5A9nC @ 10V45ns20V10 ns15 ns-4.5A-1V12V3.3A-20V10AMETAL-OXIDE SEMICONDUCTORLogic Level Gate-1 VUnknownNoROHS3 CompliantLead Free---------------- -
Surface MountSurface MountPowerPAK® SC-70-6 Dual6SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016yesObsolete1 (Unlimited)6EAR9953mOhm-6.5W26040SIA91462DualENHANCEMENT MODEDRAIN5 ns2 N-Channel (Dual)SWITCHING53m Ω @ 3.7A, 4.5V1V @ 250μA400pF @ 10V-11.5nC @ 8V32ns20V53 ns30 ns4.5A1V8V-20V-METAL-OXIDE SEMICONDUCTORLogic Level Gate1 VUnknownNoROHS3 CompliantLead Free1.9W--------------
-
Surface MountSurface MountPowerPAK® SC-70-6 Dual6SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2014yesActive1 (Unlimited)6EAR9959MOhmOther Transistors7.8W26040-62DualENHANCEMENT MODEDRAIN5 ns2 P-Channel (Dual)SWITCHING59m Ω @ 3.6A, 4.5V1.4V @ 250μA-4.5A23nC @ 10V12ns20V10 ns25 ns-4.5A-12V--20V15AMETAL-OXIDE SEMICONDUCTORLogic Level Gate--NoROHS3 CompliantLead Free1.9W14 Weeks28.009329mge3MATTE TIN750μm2.05mm2.05mm-------
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Surface MountSurface MountPowerPAK® SC-70-6 Dual6--55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)----6.5W--SIA911-2Dual---2 P-Channel (Dual)-94mOhm @ 2.8A, 4.5V1V @ 250μA355pF @ 10V4.5A12.8nC @ 8V10ns20V10 ns20 ns-4.5A-8V-20V--Standard--NoROHS3 Compliant-1.9W-------PowerPAK® SC-70-6 Dual150°C-55°C6.5W355pF94mOhm94 mΩ
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