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SI4963BDY-T1-E3

Vishay Siliconix SI4963BDY-T1-E3

Part Number:
SI4963BDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2847548-SI4963BDY-T1-E3
Description:
MOSFET 2P-CH 20V 4.9A 8-SOIC
ECAD Model:
Datasheet:
SI4963BDY-T1-E3

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Specifications
Vishay Siliconix SI4963BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4963BDY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    32mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.1W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI4963
  • Pin Count
    8
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.1W
  • Turn On Delay Time
    30 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    32m Ω @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    4.9A
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 4.5V
  • Rise Time
    40ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    80 ns
  • Continuous Drain Current (ID)
    6.5A
  • Threshold Voltage
    -600mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    4.9A
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4963BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4963BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4963BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4963BDY-T1-E3 More Descriptions
Transistor MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
Dual P-Channel 20 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
SI4963BDY-T1-E3 P-channel MOSFET Module, 4.9 A, 20 V, 8-Pin SOIC | Siliconix / Vishay SI4963BDY-T1-E3
MOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI4963BDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Number of Channels
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Max Junction Temperature (Tj)
    Nominal Vgs
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power - Max
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI4963BDY-T1-E3
    SI4963BDY-T1-E3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    32mOhm
    Matte Tin (Sn)
    Other Transistors
    1.1W
    GULL WING
    260
    30
    SI4963
    8
    2
    Dual
    ENHANCEMENT MODE
    1.1W
    30 ns
    2 P-Channel (Dual)
    32m Ω @ 6.5A, 4.5V
    1.4V @ 250μA
    4.9A
    21nC @ 4.5V
    40ns
    20V
    40 ns
    80 ns
    6.5A
    -600mV
    12V
    4.9A
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4925DDY-T1-GE3
    SI4925DDY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    -
    -
    Active
    1 (Unlimited)
    8
    EAR99
    29mOhm
    -
    -
    5W
    GULL WING
    -
    -
    SI4925
    8
    2
    Dual
    ENHANCEMENT MODE
    5W
    10 ns
    2 P-Channel (Dual)
    29m Ω @ 7.3A, 10V
    3V @ 250μA
    8A
    50nC @ 10V
    35ns
    30V
    16 ns
    45 ns
    -7.3A
    -1V
    20V
    -
    -30V
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1.75mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    TrenchFET®
    2
    SWITCHING
    1350pF @ 15V
    150°C
    -3 V
    -
    -
    -
    -
    -
    -
    SI4963BDY-T1-E3 vs SI4925DDY-T1-GE3
  • SI4914DY-T1-E3
    SI4914DY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    1.16W
    -
    -
    -
    SI4914
    -
    2
    -
    -
    -
    7 ns
    2 N-Channel (Half Bridge)
    23mOhm @ 7A, 10V
    2.5V @ 250μA
    5.5A 5.7A
    8.5nC @ 4.5V
    13ns
    30V
    13 ns
    35 ns
    5.7A
    -
    20V
    -
    30V
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    LITTLE FOOT®
    2
    -
    -
    -
    -
    8-SO
    150°C
    -55°C
    1.1W 1.16W
    20mOhm
    23 mΩ
    SI4963BDY-T1-E3 vs SI4914DY-T1-E3
  • SI4941EDY-T1-E3
    SI4941EDY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    2W
    -
    -
    -
    SI4941
    -
    -
    -
    -
    -
    5.5 μs
    2 P-Channel (Dual)
    21mOhm @ 8.3A, 10V
    2.8V @ 250μA
    10A
    70nC @ 10V
    11μs
    30V
    24 μs
    30 μs
    10A
    -
    20V
    -
    -
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    TrenchFET®
    2
    -
    -
    -
    -
    8-SO
    150°C
    -55°C
    3.6W
    21mOhm
    21 mΩ
    SI4963BDY-T1-E3 vs SI4941EDY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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