Vishay Siliconix SI4948BEY-T1-E3
- Part Number:
- SI4948BEY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473632-SI4948BEY-T1-E3
- Description:
- MOSFET 2P-CH 60V 2.4A 8-SOIC
- ECAD Model:
-
- Datasheet:
- SI4948BEY-T1-E3
Vishay Siliconix SI4948BEY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4948BEY-T1-E3.
- Package / CaseSOP8
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
SI4948BEY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4948BEY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4948BEY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4948BEY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4948BEY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4948BEY-T1-E3 More Descriptions
Transistor MOSFET Array Dual P-CH 60V 2.4A 8-Pin SOIC T/R
Dual P-Channel 60 V 0.12 Ohms Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 2.4A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL P CHANNEL, -60V, -2.4A, SOIC-8, FULL REEL; Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:-; No. of Pins:8Pins RoHS Compliant: No
DUAL P CHANNEL MOSFET, -60V, SOIC; Trans; DUAL P CHANNEL MOSFET, -60V, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-2.4A; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:0.1ohm; Rds(on) Test Voltage Vgs:-10V
Dual P-Channel 60 V 0.12 Ohms Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 2.4A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL P CHANNEL, -60V, -2.4A, SOIC-8, FULL REEL; Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:-; No. of Pins:8Pins RoHS Compliant: No
DUAL P CHANNEL MOSFET, -60V, SOIC; Trans; DUAL P CHANNEL MOSFET, -60V, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-2.4A; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:0.1ohm; Rds(on) Test Voltage Vgs:-10V
The three parts on the right have similar specifications to SI4948BEY-T1-E3.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusFactory Lead TimeMountMounting TypeNumber of PinsWeightTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureRadiation HardeningPower DissipationHeightLengthWidthReach Compliance CodeQualification StatusDrain Current-Max (Abs) (ID)View Compare
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SI4948BEY-T1-E3SOP8Tape & Reel (TR)RoHS Compliant---------------------------------------------------- -
8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 Compliant14 WeeksSurface MountSurface Mount8186.993455mgSILICON-55°C~150°C TJTrenchFET®2013e3yesActive1 (Unlimited)8EAR99PURE MATTE TINOther Transistors1.1WGULL WING26030SI4925822DualENHANCEMENT MODE9 ns2 P-Channel (Dual)SWITCHING25m Ω @ 7.1A, 10V3V @ 250μA5.3A50nC @ 10V12ns30V12 ns60 ns-5.3A20V-30VMETAL-OXIDE SEMICONDUCTORLogic Level GateNo-------
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 Compliant14 WeeksSurface MountSurface Mount8186.993455mgSILICON-55°C~150°C TJ-2016e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)Other Transistors1.1WGULL WING26040SI496382-DualENHANCEMENT MODE30 ns2 P-Channel (Dual)-32m Ω @ 6.5A, 4.5V1.4V @ 250μA-21nC @ 4.5V40ns20V55 ns80 ns4.9A12V-METAL-OXIDE SEMICONDUCTORLogic Level GateNo1.1W1.55mm5mm4mm---
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8-SOIC (0.154, 3.90mm Width)Tape & Reel (TR)ROHS3 Compliant-Surface MountSurface Mount8-SILICON-55°C~150°C TJTrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99MATTE TINFET General Purpose Power1.1WGULL WING26040SI497482-DualENHANCEMENT MODE-2 N-Channel (Dual)SWITCHING19m Ω @ 8A, 10V3V @ 250μA6A 4.4A11nC @ 4.5V11ns-6 ns15 ns6A20V30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-2W---unknownNot Qualified4.4A
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