SI4943CDY-T1-E3

Vishay Siliconix SI4943CDY-T1-E3

Part Number:
SI4943CDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2847923-SI4943CDY-T1-E3
Description:
MOSFET 2P-CH 20V 8A 8-SOIC
ECAD Model:
Datasheet:
SI4943CDY-T1-E3

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Specifications
Vishay Siliconix SI4943CDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4943CDY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    19.2mOhm
  • Terminal Finish
    PURE MATTE TIN
  • Max Power Dissipation
    3.1W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI4943
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    50 ns
  • Power - Max
    3.1W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    19.2m Ω @ 8.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1945pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    8A
  • Gate Charge (Qg) (Max) @ Vgs
    62nC @ 10V
  • Rise Time
    71ns
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    29 ns
  • Continuous Drain Current (ID)
    -8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4943CDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4943CDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4943CDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4943CDY-T1-E3 More Descriptions
Transistor MOSFET Array Dual P-CH 20V 8A 8-Pin SOIC T/R
DUAL P-CHANNEL 20-V (D-S) MOSFET
Transistor; Continuous Drain Current, Id:-8000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI4943CDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Drain to Source Resistance
    Rds On Max
    Threshold Voltage
    Input Capacitance
    Max Junction Temperature (Tj)
    REACH SVHC
    View Compare
  • SI4943CDY-T1-E3
    SI4943CDY-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    19.2mOhm
    PURE MATTE TIN
    3.1W
    GULL WING
    260
    30
    SI4943
    8
    2
    2
    Dual
    ENHANCEMENT MODE
    2W
    50 ns
    3.1W
    2 P-Channel (Dual)
    SWITCHING
    19.2m Ω @ 8.3A, 10V
    3V @ 250μA
    1945pF @ 10V
    8A
    62nC @ 10V
    71ns
    15 ns
    29 ns
    -8A
    20V
    8A
    -20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4914DY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    LITTLE FOOT®
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    1.16W
    -
    -
    -
    SI4914
    -
    2
    2
    -
    -
    -
    7 ns
    1.1W 1.16W
    2 N-Channel (Half Bridge)
    -
    23mOhm @ 7A, 10V
    2.5V @ 250μA
    -
    5.5A 5.7A
    8.5nC @ 4.5V
    13ns
    13 ns
    35 ns
    5.7A
    20V
    -
    30V
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    ROHS3 Compliant
    -
    8-SO
    150°C
    -55°C
    30V
    20mOhm
    23 mΩ
    -
    -
    -
    -
  • SI4941EDY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    2W
    -
    -
    -
    SI4941
    -
    -
    2
    -
    -
    -
    5.5 μs
    3.6W
    2 P-Channel (Dual)
    -
    21mOhm @ 8.3A, 10V
    2.8V @ 250μA
    -
    10A
    70nC @ 10V
    11μs
    24 μs
    30 μs
    10A
    20V
    -
    -
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    ROHS3 Compliant
    -
    8-SO
    150°C
    -55°C
    30V
    21mOhm
    21 mΩ
    -
    -
    -
    -
  • SI4909DY-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    3.2W
    -
    -
    -
    -
    -
    2
    2
    Dual
    -
    2W
    10 ns
    3.2W
    2 P-Channel (Dual)
    -
    27mOhm @ 8A, 10V
    2.5V @ 250μA
    2000pF @ 20V
    8A
    63nC @ 10V
    9ns
    13 ns
    50 ns
    -8A
    20V
    -
    -40V
    -
    Logic Level Gate
    1.75mm
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    8-SO
    150°C
    -55°C
    40V
    21mOhm
    27 mΩ
    -1.2V
    2nF
    150°C
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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