Vishay Siliconix SI4943CDY-T1-E3
- Part Number:
- SI4943CDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2847923-SI4943CDY-T1-E3
- Description:
- MOSFET 2P-CH 20V 8A 8-SOIC
- Datasheet:
- SI4943CDY-T1-E3
Vishay Siliconix SI4943CDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4943CDY-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance19.2mOhm
- Terminal FinishPURE MATTE TIN
- Max Power Dissipation3.1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSI4943
- Pin Count8
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time50 ns
- Power - Max3.1W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs19.2m Ω @ 8.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1945pF @ 10V
- Current - Continuous Drain (Id) @ 25°C8A
- Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
- Rise Time71ns
- Fall Time (Typ)15 ns
- Turn-Off Delay Time29 ns
- Continuous Drain Current (ID)-8A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage-20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.5mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4943CDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4943CDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4943CDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4943CDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4943CDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4943CDY-T1-E3 More Descriptions
Transistor MOSFET Array Dual P-CH 20V 8A 8-Pin SOIC T/R
DUAL P-CHANNEL 20-V (D-S) MOSFET
Transistor; Continuous Drain Current, Id:-8000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
DUAL P-CHANNEL 20-V (D-S) MOSFET
Transistor; Continuous Drain Current, Id:-8000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI4943CDY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Drain to Source ResistanceRds On MaxThreshold VoltageInput CapacitanceMax Junction Temperature (Tj)REACH SVHCView Compare
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SI4943CDY-T1-E314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Active1 (Unlimited)8EAR9919.2mOhmPURE MATTE TIN3.1WGULL WING26030SI4943822DualENHANCEMENT MODE2W50 ns3.1W2 P-Channel (Dual)SWITCHING19.2m Ω @ 8.3A, 10V3V @ 250μA1945pF @ 10V8A62nC @ 10V71ns15 ns29 ns-8A20V8A-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.5mm5mm4mmNoROHS3 CompliantLead Free-----------
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mg--55°C~150°C TJTape & Reel (TR)LITTLE FOOT®2009-Obsolete1 (Unlimited)----1.16W---SI4914-22---7 ns1.1W 1.16W2 N-Channel (Half Bridge)-23mOhm @ 7A, 10V2.5V @ 250μA-5.5A 5.7A8.5nC @ 4.5V13ns13 ns35 ns5.7A20V-30V-Logic Level Gate1.55mm5mm4mm-ROHS3 Compliant-8-SO150°C-55°C30V20mOhm23 mΩ----
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)----2W---SI4941--2---5.5 μs3.6W2 P-Channel (Dual)-21mOhm @ 8.3A, 10V2.8V @ 250μA-10A70nC @ 10V11μs24 μs30 μs10A20V---Logic Level Gate1.55mm5mm4mm-ROHS3 Compliant-8-SO150°C-55°C30V21mOhm21 mΩ----
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2014-Active1 (Unlimited)----3.2W-----22Dual-2W10 ns3.2W2 P-Channel (Dual)-27mOhm @ 8A, 10V2.5V @ 250μA2000pF @ 20V8A63nC @ 10V9ns13 ns50 ns-8A20V--40V-Logic Level Gate1.75mm--NoROHS3 CompliantLead Free8-SO150°C-55°C40V21mOhm27 mΩ-1.2V2nF150°CNo SVHC
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