Vishay Siliconix SI4943BDY-T1-E3
- Part Number:
- SI4943BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473560-SI4943BDY-T1-E3
- Description:
- MOSFET 2P-CH 20V 6.3A 8-SOIC
- Datasheet:
- SI4943BDY-T1-E3
Vishay Siliconix SI4943BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4943BDY-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance19mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1.1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI4943
- Pin Count8
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.1W
- Turn On Delay Time11 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs19m Ω @ 8.4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C6.3A
- Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
- Rise Time10ns
- Fall Time (Typ)10 ns
- Turn-Off Delay Time94 ns
- Continuous Drain Current (ID)-8.4A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6.3A
- Drain to Source Breakdown Voltage-20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs-1 V
- Height1.55mm
- Length5mm
- Width4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4943BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4943BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4943BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4943BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4943BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4943BDY-T1-E3 More Descriptions
Dual P-Channel 20 V 0.019 Ohm Surface Mount Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 20V 6.3A 8-Pin SOIC T/R
SI4943BDY-T1-E3 P-channel MOSFET Module, 6.3 A, 20 V, 8-Pin SOIC | Siliconix / Vishay SI4943BDY-T1-E3
Transistor; Continuous Drain Current, Id:-8.4A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.019ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
Transistor MOSFET Array Dual P-CH 20V 6.3A 8-Pin SOIC T/R
SI4943BDY-T1-E3 P-channel MOSFET Module, 6.3 A, 20 V, 8-Pin SOIC | Siliconix / Vishay SI4943BDY-T1-E3
Transistor; Continuous Drain Current, Id:-8.4A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.019ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI4943BDY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxInput Capacitance (Ciss) (Max) @ VdsDrain to Source Voltage (Vdss)Threshold VoltageInput CapacitanceMax Junction Temperature (Tj)Drain to Source ResistanceRds On MaxDrain-source On Resistance-MaxView Compare
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SI4943BDY-T1-E314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)8EAR9919mOhmMatte Tin (Sn)Other Transistors1.1WGULL WING26040SI4943822DualENHANCEMENT MODE1.1W11 ns2 P-Channel (Dual)SWITCHING19m Ω @ 8.4A, 10V3V @ 250μA6.3A25nC @ 5V10ns10 ns94 ns-8.4A20V6.3A-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-1 V1.55mm5mm4mmUnknownNoROHS3 CompliantLead Free---------------
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99-MATTE TINFET General Purpose Power1.1WGULL WING26040SI497482-DualENHANCEMENT MODE2W-2 N-Channel (Dual)SWITCHING19m Ω @ 8A, 10V3V @ 250μA6A 4.4A11nC @ 4.5V11ns6 ns15 ns6A20V4.4A30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate------ROHS3 Compliant-unknownNot Qualified------------
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2014--Active1 (Unlimited)-----3.2W-----22Dual-2W10 ns2 P-Channel (Dual)-27mOhm @ 8A, 10V2.5V @ 250μA8A63nC @ 10V9ns13 ns50 ns-8A20V--40V-Logic Level Gate-1.75mm--No SVHCNoROHS3 CompliantLead Free--8-SO150°C-55°C3.2W2000pF @ 20V40V-1.2V2nF150°C21mOhm27 mΩ-
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)8EAR99-PURE MATTE TINOther Transistors1.1WGULL WING26030SI491382-DualENHANCEMENT MODE1.1W32 ns2 P-Channel (Dual)SWITCHING15m Ω @ 9.4A, 4.5V1V @ 500μA7.1A65nC @ 4.5V42ns160 ns350 ns9.4A8V7.1A-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate----UnknownNoROHS3 Compliant--------20V-1V----0.015Ohm
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