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SI4925BDY-T1-E3

Vishay Siliconix SI4925BDY-T1-E3

Part Number:
SI4925BDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2473284-SI4925BDY-T1-E3
Description:
MOSFET 2P-CH 30V 5.3A 8-SOIC
ECAD Model:
Datasheet:
SI4925BDY-T1-E3

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Specifications
Vishay Siliconix SI4925BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4925BDY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Other Transistors
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI4925
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power - Max
    1.1W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 7.1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain-source On Resistance-Max
    0.025Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2W
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
SI4925BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4925BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4925BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4925BDY-T1-E3 More Descriptions
Dual P-Channel 30 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 30V 5.3A 8-Pin SOIC T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-7.1A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI4925BDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    FET Feature
    RoHS Status
    Mount
    Number of Pins
    Weight
    Published
    Resistance
    Max Power Dissipation
    Number of Channels
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Input Capacitance (Ciss) (Max) @ Vds
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI4925BDY-T1-E3
    SI4925BDY-T1-E3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    8541.29.00.95
    Other Transistors
    GULL WING
    260
    unknown
    30
    SI4925
    8
    R-PDSO-G8
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1.1W
    2 P-Channel (Dual)
    SWITCHING
    25m Ω @ 7.1A, 10V
    3V @ 250μA
    5.3A
    50nC @ 10V
    30V
    5.3A
    0.025Ohm
    30V
    METAL-OXIDE SEMICONDUCTOR
    2W
    Logic Level Gate
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4925DDY-T1-GE3
    SI4925DDY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    -
    -
    Active
    1 (Unlimited)
    8
    EAR99
    -
    -
    -
    GULL WING
    -
    -
    -
    SI4925
    8
    -
    -
    2
    -
    ENHANCEMENT MODE
    -
    2 P-Channel (Dual)
    SWITCHING
    29m Ω @ 7.3A, 10V
    3V @ 250μA
    8A
    50nC @ 10V
    30V
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    -
    Standard
    ROHS3 Compliant
    Surface Mount
    8
    186.993455mg
    2015
    29mOhm
    5W
    2
    Dual
    5W
    10 ns
    1350pF @ 15V
    35ns
    16 ns
    45 ns
    -7.3A
    -1V
    20V
    -30V
    150°C
    -3 V
    1.75mm
    5mm
    4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    SI4925BDY-T1-E3 vs SI4925DDY-T1-GE3
  • SI4974DY-T1-E3
    SI4974DY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    MATTE TIN
    -
    FET General Purpose Power
    GULL WING
    260
    unknown
    40
    SI4974
    8
    -
    Not Qualified
    2
    -
    ENHANCEMENT MODE
    -
    2 N-Channel (Dual)
    SWITCHING
    19m Ω @ 8A, 10V
    3V @ 250μA
    6A 4.4A
    11nC @ 4.5V
    -
    4.4A
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    -
    Logic Level Gate
    ROHS3 Compliant
    Surface Mount
    8
    -
    2016
    -
    1.1W
    -
    Dual
    2W
    -
    -
    11ns
    6 ns
    15 ns
    6A
    -
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SI4925BDY-T1-E3 vs SI4974DY-T1-E3
  • SI4909DY-T1-GE3
    SI4909DY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2
    -
    -
    3.2W
    2 P-Channel (Dual)
    -
    27mOhm @ 8A, 10V
    2.5V @ 250μA
    8A
    63nC @ 10V
    40V
    -
    -
    -
    -
    -
    Logic Level Gate
    ROHS3 Compliant
    Surface Mount
    8
    506.605978mg
    2014
    -
    3.2W
    2
    Dual
    2W
    10 ns
    2000pF @ 20V
    9ns
    13 ns
    50 ns
    -8A
    -1.2V
    20V
    -40V
    150°C
    -
    1.75mm
    -
    -
    No SVHC
    No
    Lead Free
    8-SO
    150°C
    -55°C
    2nF
    21mOhm
    27 mΩ
    SI4925BDY-T1-E3 vs SI4909DY-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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