SBC857BWT1G

ON Semiconductor SBC857BWT1G

Part Number:
SBC857BWT1G
Manufacturer:
ON Semiconductor
Ventron No:
3585309-SBC857BWT1G
Description:
TRANS PNP 45V 0.1A SOT-323
ECAD Model:
Datasheet:
SBC857BWT1G

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Specifications
ON Semiconductor SBC857BWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC857BWT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    150mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    100MHz
  • Base Part Number
    BC85**W
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SBC857BWT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.

SBC857BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


SBC857BWT1G Applications
There are a lot of ON Semiconductor
SBC857BWT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
SBC857BWT1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A 150mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, AEC-Q101, PNP, -45V, SOT-323; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to SBC857BWT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    Halogen Free
    Gain Bandwidth Product
    Collector Emitter Saturation Voltage
    hFE Min
    Height
    Length
    Width
    Max Frequency
    Frequency - Transition
    View Compare
  • SBC857BWT1G
    SBC857BWT1G
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2015
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    150mW
    DUAL
    GULL WING
    100MHz
    BC85**W
    3
    1
    SINGLE
    150mW
    AMPLIFIER
    PNP
    PNP
    45V
    100mA
    220 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    50V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SBC807-40WT1G
    ACTIVE (Last Updated: 1 day ago)
    5 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2011
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    Other Transistors
    460mW
    -
    -
    100MHz
    BC807
    3
    1
    -
    460mW
    -
    PNP
    PNP
    45V
    500mA
    250 @ 100mA 1V
    100nA ICBO
    700mV @ 50mA, 500mA
    45V
    -
    100MHz
    50V
    -5V
    No
    ROHS3 Compliant
    Lead Free
    Single
    Halogen Free
    100MHz
    -700mV
    250
    900μm
    2.2mm
    1.35mm
    -
    -
  • SBC848BLT1G
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    300mW
    DUAL
    GULL WING
    -
    -
    3
    1
    -
    -
    -
    NPN
    NPN
    30V
    100mA
    200 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    30V
    -
    100MHz
    30V
    5V
    No
    ROHS3 Compliant
    Lead Free
    Single
    -
    -
    600mV
    -
    1.01mm
    3.04mm
    1.4mm
    100MHz
    100MHz
  • SBC807-40LT1G
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    300mW
    DUAL
    GULL WING
    100MHz
    BC807
    3
    1
    -
    300mW
    -
    PNP
    PNP
    45V
    500mA
    250 @ 100mA 1V
    100nA ICBO
    700mV @ 50mA, 500mA
    45V
    -
    100MHz
    50V
    5V
    No
    ROHS3 Compliant
    Lead Free
    Single
    Halogen Free
    100MHz
    -700mV
    250
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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